BF512,235 NXP Semiconductors, BF512,235 Datasheet - Page 6

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BF512,235

Manufacturer Part Number
BF512,235
Description
JFET N-CH 20V 30MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF512,235

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
N-Channel JFET
Frequency
100MHz
Voltage - Rated
20V
Current Rating
30mA
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
2.2 V
Gate-source Breakdown Voltage
20 V
Drain Current (idss At Vgs=0)
30 mA
Power Dissipation
250 mW
Channel Type
N
Drain Current (max)
30mA
Drain-gate Voltage (max)
20V
Drain-source Volt (max)
20V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
PACKAGE OUTLINE
December 1997
N-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
6
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BF510 to 513
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23

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