IPA60R520E6 Infineon Technologies, IPA60R520E6 Datasheet - Page 4

MOSFET N-CH 600V 8.1A TO220

IPA60R520E6

Manufacturer Part Number
IPA60R520E6
Description
MOSFET N-CH 600V 8.1A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of IPA60R520E6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
3.5V @ 230µA
Gate Charge (qg) @ Vgs
23.4nC @ 10V
Input Capacitance (ciss) @ Vds
512pF @ 100V
Power - Max
29W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.47 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.1 A
Power Dissipation
29 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPA60R520E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R520E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Power dissipation for
TO-220
Power dissipation for
TO-220 FullPAK
Operating and storage temperature
Mounting torque
TO-220
Mounting torque
TO-220 FullPAK
Continuous diode forward current
Diode pulse current
Reverse diode dv/dt
Maximum diode commutation
speed
1) Limited by
2) Pulse width
3) Identical low side and high side switch with identical
Final Data Sheet
T
j
= 25 °C, unless otherwise specified.
3)
Maximum ratings
Maximum ratings
T
t
j,max.
p
limited by
Maximum duty cycle D=0.75
2)
3)
2)
1)
T
j,max
Symbol
dv/dt
I
I
E
E
I
V
P
P
T
I
I
dv/dt
di
D
D,pulse
AR
S
S,pulse
j
AS
AR
GS
tot
tot
,T
f
/dt
stg
R
Min.
-
-
-
-
-
-
-20
-30
-
-
-55
-
-
-
-
G
4
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Values
600V CoolMOS™ E6 Power Transistor
Max.
8.1
22
153
0.23
1.4
50
20
30
66
29
150
60
7
22
15
500
5.1
50
Unit
V/ns
A
A
mJ
A
V
W
W
°C
Ncm
A
A
V/ns
A/µs
Note / Test Condition
T
T
T
I
(see table 21)
I
V
static
AC (f>1 Hz)
T
T
M3 and M3.5 screws
M2.5 screws
T
T
V
T
(see table 22)
D
D
C
C
C
DS
C
C
C
C
DS
j
=25 °C
=1.4 A,V
=1.3 A,V
= 25 °C
= 100°C
=25 °C
=25 °C
=25 °C
=25 °C
=25 °C
=0...480 V
=0...400 V,I
Rev. 2.0, 2010-04-09
Maximum ratings
IPx60R520E6
DD
DD
=50 V
=50 V
SD
I
D
,

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