STQ3N45K3-AP STMicroelectronics, STQ3N45K3-AP Datasheet - Page 6

• Manufacturer Part Number: STQ3N45K3-AP
• Description: MOSFET N-CH 450V 1.8A TO-92
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STQ3N45K3-AP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 150pF @ 25V
• Power - Max: 2.5W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10969-3

Test circuits
3
6/12
Figure 2.
Figure 4.
Figure 6.
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
Switching times test circuit for
resistive load
switching and diode recovery times
Unclamped inductive waveform
Test circuit for inductive load
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
Doc ID 17206 Rev 2
1000
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 3.
Figure 5.
Figure 7.
V
P
i
V
W
0
0
i
=20V=V
P
STN3N45K3, STQ3N45K3-AP, STU3N45K3
w
10%
2200
µF
1kΩ
GMAX
td
Gate charge test circuit
Unclamped Inductive load test
circuit
Switching time waveform
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD