FCA16N60N Fairchild Semiconductor, FCA16N60N Datasheet - Page 6

• Manufacturer Part Number: FCA16N60N
• Description: MOSFET N-CH 600V TO-3PN
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCA16N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 134.4W
• Mounting Type: Through Hole
• Package / Case: TO-3PN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCA16N60N Rev. A1
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( D r i v e r )
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( D U T )
( D U T )
( D U T )
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V
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G S
G S
S D
S D
D S
D S
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
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, B o d y D i o d e F o r w a r d C u r r e n t
F o r w a r d V o l t a g e D r o p
F o r w a r d V o l t a g e D r o p
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G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
G a t e P u l s e P e r i o d
G a t e P u l s e P e r i o d
G a t e P u l s e P e r i o d
B o d y D i o d e
B o d y D i o d e
S a m e T y p e
S a m e T y p e
B o d y D i o d e R e c o v e r y d v / d t
B o d y D i o d e R e c o v e r y d v / d t
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• d v / d t c o n t r o l l e d b y R
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B o d y D i o d e R e v e r s e C u r r e n t
B o d y D i o d e R e v e r s e C u r r e n t
c o n t r o l l e d b y p u l s e p e r i o d
c o n t r o l l e d b y p u l s e p e r i o d
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