FDMC7660S Fairchild Semiconductor, FDMC7660S Datasheet - Page 6

• Manufacturer Part Number: FDMC7660S
• Description: MOSFET N-CH 30V 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7660S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 4325pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMC7660S.
20
15
10
-5
5
0
diode reverse recovery characteristic
Figure 14. FDMC7660S SyncFET body
0
50
TIME (ns)
100
(continued)
di/dt = 300 A/
150
µ
s
200
6
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
J
T
J
= 100
J
= 125
= 25
15
o
o
o
C
C
C
20
25
www.fairchildsemi.com
30