FDMC8882 Fairchild Semiconductor, FDMC8882 Datasheet - Page 4

• Manufacturer Part Number: FDMC8882
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.3 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 945pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
Typical Characteristics
0.01
0.1
Figure 7.
20
10
50
10
10
1
1
8
6
4
2
0
0.01
0.01
0
Figure 9.
I
D
Figure 11.
= 10.5 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
T
JA
= MAX RATED
= 25
Switching Capability
V
Gate Charge Characteristics
= 125
3
DS
t
0.1
Operating Area
o
, DRAIN to SOURCE VOLTAGE (V)
AV
Unclamped Inductive
C
0.1
T
, TIME IN AVALANCHE (ms)
Q
J
o
C/W
= 125
Forward Bias Safe
g
DS(on)
, GATE CHARGE (nC)
V
DD
6
o
= 10 V
C
V
1
DD
T
T
= 15 V
1
J
J
9
= 25
= 25 °C unless otherwise noted
o
C
T
10
J
V
= 100
DD
12
= 20 V
10
o
C
100
1 ms
10 ms
100 ms
1 s
10 s
DC
P
100
s
15
30
4
1000
1000
100
100
0.5
Figure 10.
10
40
30
20
10
50
1
0
10
0.1
25
Figure 12.
Figure 8.
-4
Limited by Package
f = 1 MHz
V
SINGLE PULSE
R
T
Current vs Case Temperature
GS
A
T
JA
= 25
= 0 V
10
= 125
V
GS
-3
V
o
50
C
Maximum Continuous Drain
Power Dissipation
DS
to Source Voltage
= 10 V
o
Capacitance vs Drain
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
Single Pulse Maximum
10
c
,
CASE TEMPERATURE (
-2
t, PULSE WIDTH (sec)
75
1
10
-1
R
V
1
GS
T
100
JC
= 6 V
= 6.6
10
o
o
C/W
C )
C
C
C
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125
iss
oss
rss
10
V
GS
100
= 10 V
1000
150
30