NTLUS3A40PZTAG ON Semiconductor, NTLUS3A40PZTAG Datasheet - Page 3

• Manufacturer Part Number: NTLUS3A40PZTAG
• Description: T4 20/8 PCH 2X2 UDFN SING
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A40PZTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
18
16
14
12
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
8
6
4
2
0
0
−50
1.0
Figure 3. On−Resistance vs. Gate−to−Source
V
I
D
0.5
Figure 5. On−Resistance Variation with
GS
−25
= −4.0 A
Figure 1. On−Region Characteristics
−V
1.5
= −4.5 V
DS
T
V
1.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
GS
−V
0
2.0
= −4.5 V
−4.0 V
GS
1.5
−3.5 V
−3.0 V
, GATE VOLTAGE (V)
Temperature
−2.5 V
25
−2.0 V
2.5
Voltage
2.0
50
2.5
3.0
75
3.0
3.5
TYPICAL CHARACTERISTICS
100
3.5
I
T
D
J
= −4.0 A
= 25°C
4.0
http://onsemi.com
4.0
−1.8 V
−1.6 V
125
4.5
4.5
150
3
100,000
10,000
0.080
0.070
0.060
0.050
0.040
0.030
0.020
1000
100
20
18
16
14
12
10
8
6
4
2
0
2
0
0
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
DS
2
4
≤ −10 V
−V
−V
0.5
Figure 2. Transfer Characteristics
DS
T
−1.5 V
GS
4
J
6
, DRAIN−TO−SOURCE VOLTAGE (V)
= 125°C
, GATE−TO−SOURCE VOLTAGE (V)
T
J
−I
= 25°C
6
D
1.0
, DRAIN CURRENT (A)
8
Gate Voltage
vs. Voltage
8
T
T
10
J
J
−1.8 V
= 125°C
= 85°C
1.5
10
T
J
12
= −55°C
12
2.0
14
14
V
16
GS
16
T
2.5
J
= −4.5 V
= 25°C
−2.5 V
18
18
3.0
20
20