ESDR0544MDMR4G ON Semiconductor, ESDR0544MDMR4G Datasheet - Page 2

• Manufacturer Part Number: ESDR0544MDMR4G
• Description: 4 CHAN LOW CAP ESD MICRO-10
• Manufacturer: ON Semiconductor

Specifications of ESDR0544MDMR4G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
1. TVS devices are normally selected according to the working peak reverse voltage (V
2. V
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Junction Capacitance
Junction Capacitance
or continuous peak operating voltage level.
BR
is measured at pulse test current I
Parameter
Symbol
V
V
RWM
C
C
I
BR
R
J
J
(T
T
.
A
=25°C unless otherwise specified)
(Note 1)
I
V
V
V
T
RWM
R
R
= 1 mA, (Note 2)
= 0 V, f = 1 MHz between I/O Pins and GND
= 0 V, f = 1 MHz between I/O Pins
= 5 V
http://onsemi.com
Conditions
2
RWM
), which should be equal or greater than the DC
Min
6.0
Typ
0.7
0.3
Max
5.0
1.0
0.9
0.7
Unit
mA
pF
pF
V
V