TCST2103 Vishay, TCST2103 Datasheet - Page 2

SENSR OPTO SLOT 3.1MM TRANS THRU

TCST2103

Manufacturer Part Number
TCST2103
Description
SENSR OPTO SLOT 3.1MM TRANS THRU
Manufacturer
Vishay
Type
Unamplifiedr
Datasheet

Specifications of TCST2103

Sensing Distance
3.1mm
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
60mA
Current - Collector (ic) (max)
4mA
Voltage - Collector Emitter Breakdown (max)
70V
Response Time
10µs, 8µs
Mounting Type
Through Hole
Package / Case
Slotted Module, 4-Lead Dual Row
Operating Temperature
-55°C ~ 85°C
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 55 C
Wavelength
950 nm
Output Collector Emitter Voltage (detector)
70 V
Maximum Reverse Voltage (emitter)
6 V
Maximum Collector Current (detector)
100 mA
Slot Width
3.1 mm
Aperture Width
1 mm
Output Device
Phototransistor
Power Dissipation
250 mW
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
60mA
Output Voltage
70V
Opto Case Style
Through Hole
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCST2103
Manufacturer:
Vishay Semiconductors
Quantity:
256
Part Number:
TCST2103
Manufacturer:
德律风根
Quantity:
20 000
Company:
Part Number:
TCST2103
Quantity:
70 000
Part Number:
TCST2103B
Manufacturer:
EVERLIGHT
Quantity:
2 000
TCST2103, TCST2202, TCST2300
Vishay Semiconductors
Note
(1)
ABSOLUTE MAXIMUM RATINGS
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT (EMITTER)
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector peak current
Power dissipation
Junction temperature
BASIC CHARACTERISTICS
PARAMETER
COUPLER
Current transfer ratio
Collector current
Collector emitter saturation
voltage
Resolution, path of the shutter
crossing the radiant sensitive
zone
T
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
95 11088
400
300
200
100
0
0
Phototransistor
Coupled device
IR-diode
T
amb
30
- Ambient Temperature (°C)
60
90
For technical questions, contact:
I
I
F
F
V
V
I
F
I
TEST CONDITION
= 20 mA, I
= 20 mA, I
CE
CE
Crel
= 20 mA, I
t
p
TEST CONDITION
(1)
= 5 V, I
= 5 V, I
/T = 0.5, t
= 10 % to 90 %
120
Transmissive Optical Sensor with
T
T
amb
amb
t
p
≤ 10 µs
F
F
C
C
(1)
≤ 25 °C
≤ 25 °C
C
150
= 20 mA
= 20 mA
= 0.5 mA
= 0.1 mA
p
= 1 mA
Phototransistor Output
≤ 10 ms
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
TCST2103
TCST2202
TCST2300
PART
sensorstechsupport@vishay.com
SYMBOL
V
V
I
I
V
FSM
P
P
CEO
ECO
T
CM
T
I
SYMBOL
F
R
V
V
j
j
V
V
V
CTR
CTR
CTR
CEsat
CEsat
CEsat
I
I
I
s
s
s
C
C
C
MIN.
1.25
0.25
10
5
2
1
VALUE
100
100
200
150
100
60
70
6
3
7
TYP.
2.5
0.5
0.6
0.4
0.2
20
10
4
2
Document Number: 81147
MAX.
0.4
0.4
0.4
Rev. 1.0, 17-Aug-09
UNIT
mW
mW
mA
mA
°C
°C
V
A
V
V
UNIT
mm
mm
mm
mA
mA
mA
%
%
%
V
V
V

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