APT12031JFLL Microsemi Power Products Group, APT12031JFLL Datasheet - Page 2

• Manufacturer Part Number: APT12031JFLL
• Description: MOSFET N-CH 1200V 30A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT12031JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 310 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 365nC @ 10V
• Input Capacitance (ciss) @ Vds: 9480pF @ 25V
• Power - Max: 690W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
I
t
V
dv
C
t
C
C
Q
RRM
I
Q
Q
d(on)
d(off)
E
E
E
E
SM
t
Q
I
SD
S
rr
oss
t
t
/
rss
iss
on
off
on
off
gs
gd
r
rr
JC
f
dt
JA
g
0.20
0.16
0.12
0.08
0.04
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
10
S
S
S
= -30A,
= -30A,
= -30A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.5
0.3
0.1
0.05
0.7
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -30A)
-3
SINGLE PULSE
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
Test Conditions
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 800V, V
dt
= 30A, R
= 30A, R
= 800V V
V
V
= 30A @ 25°C
= 30A @ 25°C
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6
10
= 600V
= 600V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
j
-2
= +25°C, L = 8.0mH, R
G
G
GS
GS
= 5
= 5
= 15V
I
S
= 15V
-
I
D
30A
Note:
di
Peak T J = P DM x Z JC + T C
/
dt
MIN
MIN
MIN
Duty Factor D =
10
-1
700A/µs
G
t 1
= 25 , Peak I
t 2
9480
1460
1760
1241
3035
1557
TYP
TYP
250
365
235
TYP
1.8
7.4
16
30
45
23
16
79
30
t 1
V
/ t 2
R
V
DSS
APT12031JFLL
L
MAX
MAX
MAX
120
300
600
0.18
1.3
30
18
= 30A
40
1.0
T
J
150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
µC
ns
°
nC
pF
ns
µ
C
J