APT10M07JVFR Microsemi Power Products Group, APT10M07JVFR Datasheet

APT10M07JVFR

Manufacturer Part Number

APT10M07JVFR

Description

MOSFET N-CH 100V 225A SOT-227

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT10M07JVFR.pdf (4 pages)

Specifications of APT10M07JVFR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

225A

Vgs(th) (max) @ Id

4V @ 5mA

Gate Charge (qg) @ Vgs

1050nC @ 10V

Input Capacitance (ciss) @ Vds

21600pF @ 25V

Power - Max

700W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• Lower Leakage

• Faster Switching

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DS(on)

D(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

POWER MOS V

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

• 100% Avalanche Tested

• Popular SOT-227 Package

> I

= 25°C

D(on)

, I

= ±30V, V

= V

= 0.8 V

x R

= 0V, I

= 5.0mA)

DSS

DS(on)

= 10V, 0.5 I

, V

DSS

= 250µA)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

FREDFET

)

= 125°C)

100V 225A 0.007Ω Ω Ω Ω Ω

= 25°C unless otherwise specified.

MIN

100

225

APT10M07JVFR

-55 to 150

ISOTOP

3600

TYP

100

225

900

±30

±40

700

300

225

5.6

0.007

1000

±100

MAX

250

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

Related parts for APT10M07JVFR

APT10M07JVFR Summary of contents

Page 1

... 5.0mA APT Website - http://www.advancedpower.com 100V 225A 0.007Ω Ω Ω Ω Ω FREDFET ® ISOTOP ® 25°C unless otherwise specified. C APT10M07JVFR 100 225 900 ±30 ±40 700 5.6 -55 to 150 300 225 50 3600 MIN TYP 100 225 0.007 ) = 125°C) ...

Page 2

... T = 125° 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting RECTANGULAR PULSE DURATION (SECONDS) APT10M07JVFR MIN TYP MAX 18000 21600 6800 9500 2800 4200 700 1050 130 195 DSS 300 435 120 DSS 80 120 20 40 MIN ...

Page 3

V GS =7V, 8V, 9V, 10V & 15V 300 240 180 120 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 360 -55° +25°C 300 ...

Page 4

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT10M07JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 0.8 1.2 1.6 2 ...

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