IXFN180N25T IXYS, IXFN180N25T Datasheet - Page 2

MOSFET N-CH 155A 250V SOT-227

IXFN180N25T

Manufacturer Part Number
IXFN180N25T
Description
MOSFET N-CH 155A 250V SOT-227
Manufacturer
IXYS
Series
GigaMOS™r
Datasheet

Specifications of IXFN180N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
164A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
345nC @ 10V
Input Capacitance (ciss) @ Vds
28000pF @ 25V
Power - Max
900W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
164
Rds(on), Max, Tj=25°c, (?)
0.0129
Ciss, Typ, (pf)
28000
Qg, Typ, (nc)
345
Trr, Typ, (ns)
-
Trr, Max, (ns)
-
Pd, (w)
900
Rthjc, Max, (k/w)
0.138
Package Style
SOT-227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN180N25T
Manufacturer:
IXYS
Quantity:
210
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/µs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 60A, V
= 90A, V
= 75V
= 10V, I
= 0V, V
= 15V, V
= 1Ω (External)
= 10V, V
= 0V
ADVANCE TECHNICAL INFORMATION
GS
GS
DS
D
DS
DS
= 0V, Note 1
= 0V
= 60A, Note 1
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 90A
= 90A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
100
Min.
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2050
Typ.
0.05
160
158
100
345
122
Typ.
0.77
28
37
33
28
70
11
0.138 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
180
720
Max.
200 ns
1.3
°C/W
nC
nC
nC
µC
nF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
IXFN180N25T
7,005,734 B2
7,063,975 B2
7,157,338B2

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