GA400TD60U Vishay, GA400TD60U Datasheet - Page 5

• Manufacturer Part Number: GA400TD60U
• Description: IGBT FAST 600V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 40.136nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
80000
60000
40000
20000
120
100
80
60
40
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 360V
= 15V
= 125 C
= 400A
R
V
10
G
CE

°
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C
C
C
ies

oes

res
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
1000
100
10
20
16
12
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0


R
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G1
CC
C
G
=15 ;R
= 400V
= 270A
= 15V
= 360V
= Ohm
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
400
Q , Total Gate Charge (nC)
J
G
G2
0
= 0
20
800
40
GA400TD60U
60
1200
80 100 120 140 160

I =

I =

I =
1600
C
C
C
°
800
400
200
A
A
A
2000
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