GA150KS61U Vishay, GA150KS61U Datasheet

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GA150KS61U

Manufacturer Part Number
GA150KS61U
Description
IGBT FAST 600V 150A INT-A-PAK
Manufacturer
Vishay
Datasheet

Specifications of GA150KS61U

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 150A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
13.878nF @ 30V
Power - Max
440W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

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Quantity
Price
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Part Number:
GA150KS61U
Manufacturer:
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Quantity:
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Part Number:
GA150KS61U
Quantity:
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Absolute Maximum Ratings
IGBT INT-A-PAK
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
• Very low conduction and switching losses
• HEXFRED
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
• Lower EMI, requires less snubbing
Features
Thermal / Mechanical Characteristics
www.irf.com
V
I
I
I
I
V
V
P
P
T
T
R
R
R
kHz in resonant mode
SMPS, Welding
C
CM
LM
FM
frequencies 8-40 kHz in hard switching, >200
recovery
STG
CES
GE
ISOL
D
D
J
@ T
JC
JC
CS
@ T
@ T
C
C
C
= 25°C
= 25°C
= 85°C
antiparallel diodes with ultra- soft
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
Parameter
Parameter
6
7
Low Side Switch Chopper Module
GA150KS61U
-40 to +150
-40 to +125
Ultra-Fast
3
1
2
Max.
2500
±20
600
150
300
300
300
440
230
Typ.
200
0.1
@V
V
GE
V
CE
TM
CES
=
(on) typ.
15V
Speed IGBT
Max.
0.28
0.35
=
4.0
3.0
,
600
I
C
= 1.7V
=
V
150A
Units
Units
°C/W
N m
°C
W
V
A
V
g
.
1

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GA150KS61U Summary of contents

Page 1

... STG Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ Weight of Module www.irf.com GA150KS61U Low Side Switch Chopper Module Ultra-Fast CES (on) typ. 6 15V @ ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance „ Collector-to-Emitter Leaking Current CES V ...

Page 3

125 C J 100 V GE 20µs PULSE WIDTH Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics 160 120 ...

Page 4

1MHz ies res 20000 oes ies 15000 10000 C oes 5000 C ...

Page 5

360V 15V 125° 1500A Gate Resistance ( ) Fig Typical Switching Losses vs. Gate ...

Page 6

360V 125° 25°C 0 500 1000 1500 µs) Fig Typical Reverse Recovery vs. di 1000 100 ...

Page 7

L2 L1 DUT Vcc Rg2 +Vg2 Rg1 -Vg2 L3 Vcc=60% of BVces Ls= L1+L2+L3 Vge=15V Fig. 16a - Test Circuit for Measurement off(diode) rr ...

Page 8

Figure 16e. Macro Waveforms for Figure 17. Pulsed Collector Current 8 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Test Circuit Figure 17 Test Circuit www.irf.com ...

Page 9

Notes:  Repetitive rating 20V, pulse width limited by GE max. junction temperature. ‚ See fig. 16 ƒ For screws M5x0.8 „ Pulse width 80µs; single shot. Case Outline — INT-A-PAK 80.30 [ 3.161 79.70 3.138 11 10 ...

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