CPV364M4F Vishay, CPV364M4F Datasheet - Page 5

• Manufacturer Part Number: CPV364M4F
• Description: IGBT SIP MODULE 600V 15A IMS-2
• Manufacturer: Vishay

Specifications of CPV364M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 27A
• Current - Collector (ic) (max): 27A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 30V
• Power - Max: 63W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Not Compliant
• Other names: *CPV364M4F; VS-CPV364M4F; VS-CPV364M4F; VSCPV364M4F; VSCPV364M4F

Document Number: 93610
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
Fig. 9 - Typical Switching Losses vs. Gate
1.45
1.40
1.35
1.30
0
1
0
Fig. 7 - Typical Capacitance vs.
V
V
T
V
I
J
C
CC
GE
C E
Collector-to-Emitter Voltage
= 25 C
= 480V
= 15V
, Collector-to-Em itter Voltage (V)
= 15A
R , Gate Resistance (Ohm)
10
V
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
G
GE
C
C
C
°
ies
o es
res
= 0V
Resistance
20
1 0
f = 1 MHz
30
SHORTED
40
1 0 0
A
50
0.1
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G
CC
C
= 10Ohm
= 15V
= 480V
= 400V
= 15A
20
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
G
0
40
CPV364M4F
20
40
60
60
80 100 120 140 160
80
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I =
I =
I =
C
C
C
°
100
7.5
30
15
A
A
A
120
5