IXGE200N60B IXYS, IXGE200N60B Datasheet
IXGE200N60B
Manufacturer Part Number
IXGE200N60B
Description
IGBT 600V ISOPLUS227
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGE200N60B.pdf
(2 pages)
Specifications of IXGE200N60B
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 120A
Current - Collector (ic) (max)
160A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
11nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOPLUS227™
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
160A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 227
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
175
Ic90, Tc=90°c, Igbt, (a)
112
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.1
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.7
Rthjc, Max, Igbt, (°c/w)
0.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS227
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
HiPerFAST
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
BV
V
I
I
V
CM
C25
L
C90
CES
GES
J
JM
stg
CGR
GEM
C
ISOL
CES
GES
GE(th)
CE(sat)
d
CES
T
T
J
J
Test Conditions
= 25°C to 150°C
= 25°C to 150°C; R
Continuous
Transient
T
Terminal Current Limit(RMS)
T
T
V
Clamped inductive load @ 0.8 V
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
ISOL
C
C
C
C
C
C
C
GE
CE
GE
CE
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
≤ 1 mA
= 1 mA , V
= 1 mA, V
= V
= 0 V
= 0 V, V
= 120A, V
CES
TM
GE
VJ
CE
GE
= 125°C, R
GE
= ±20 V
= V
= 15 V
= 0 V
IGBT
GE
GE
t = 1 min
t = 1 s
= 1 MΩ
G
= 2.4 Ω
T
T
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
CES
min.
600
2.5
Characteristic Values
IXGE 200N60B
-40 ... +150
-40 ... +150
Maximum Ratings
I
CM
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
= 200
2500
3000
600
600
±20
±30
160
100
400
416
150
96
19
±400
E
200
max.
5.5
2.3
2
mA
°C
°C
°C
V~
V~
µA
nA
W
V
V
V
V
A
A
A
A
A
g
V
V
V
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
ISOPLUS 227
G = Gate, E = Emitter, C = Collector
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
Easy to mount with 2 screws
Space savings
High power density
Conforms to SOT-227B outline
Isolation voltage 3000 V~
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
power supplies
either emitter terminal can be
used as Main or Kelvin Emitter
CE(sat)
V
I
V
t
C25
fi
CES
CE(sat)
TM
(IXGE)
G
= 600 V
= 160 A
= 2.3 V
= 160ns
DS98911B(09/04)
C
E
E
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IXGE200N60B Summary of contents
Page 1
... GE(th CES CE CES ± GES 120A CE(sat © 2004 IXYS All rights reserved IXGE 200N60B E Maximum Ratings 600 = 1 MΩ 600 ±20 ±30 160 100 96 400 = 2.4 Ω 200 G CM CES 416 -40 ... +150 150 -40 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
Page 2
... CE E higher T or increased R off J R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...