MUBW45-12T6K IXYS, MUBW45-12T6K Datasheet - Page 4

• Manufacturer Part Number: MUBW45-12T6K
• Description: MODULE IGBT CBI E1
• Manufacturer: IXYS

Specifications of MUBW45-12T6K

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 45A
• Current - Collector (ic) (max): 43A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 1.81nF @ 25V
• Power - Max: 160W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 104
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 43
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 31
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.50
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.80
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 13
• Rthjc, Typ, Br Chopper, (k/w): 1.35
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Input Rectifier Bridge D8 - D13
Symbol
V
I
I
I
P
Symbol
V
I
R
R
Symbol
R
B
Symbol
T
T
T
V
M
d
d
Weight
Symbol
V
R
V
R
V
R
V
R
V
R
Temperature Sensor NTC
R
FAV
DAVM
FSM
Module
Equivalent Circuits for Simulation
I
F
VJ
VJM
stg
S
A
RRM
tot
thJC
thCH
25
25/85
ISOL
0
0
0
0
0
0
0
0
0
0
d
V
0
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. surge forward current
total power dissipation
Conditions
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
resistance
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
R
Definitions
rectifier diode
IGBT
free wheeling diode
IGBT
free wheeling diode
0
I
V
(per diode)
(per diode)
Conditions
sine 80°
rectangular; d =
t = 0 ms; sine 50 Hz
Conditions
Conditions
I
(M4)
Conditions
D8 - D3
T - T6
D - D6
T7
D7
F
ISOL
R
= 45 A
= V
<  mA; 50/60 Hz
RRM

/
3
; bridge
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
C
C
C
C
C
VJ
VJ
VJ
VJ
VJ
= 25°C unless otherwise stated
= 80°C
= 80°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
MUBW45-12T6K
min.
min.
min.
min.
4.45
2.7
2.7
-40
-40
2.0
Characteristic Values
350
0.35
0.90
0.95
.46
Maximum Ratings
typ.
Ratings
typ.
Ratings
typ.
Ratings
typ.
20
0.4
4.7
.5
.5
40
43
4
63
9
max.
600
max.
max.
2500
max.
.4
.38
0.02
04
320
0
25
50
25
.
5.0
2.2
37
20073a
4 - 5
K/W
K/W
Unit
Unit
Unit
mm
mm
mA
mA
Nm
mW
mW
mW
mW
mW
kW
V~
°C
°C
°C
W
V
V
V
A
A
A
K
V
V
V
V
V
g