IXBN75N170A IXYS, IXBN75N170A Datasheet
IXBN75N170A
Manufacturer Part Number
IXBN75N170A
Description
IC TRANS BIPO 1700V SOT-227
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet
1.IXBN75N170A.pdf
(2 pages)
Specifications of IXBN75N170A
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 42A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
50µA
Input Capacitance (cies) @ Vce
7.4nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1700
Ic25, Tc=25°c, (a)
75
Ic90, Tc=90°c, (a)
42
Vce(sat), Typ, Tj=25°c, (v)
6
Tf Typ, Tj=25°c, (ns)
-
Gate Drive, (v)
-
Rthjc, Max, (k/w)
0.2
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
T
(SCSOA)
P
T
T
T
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
GES
CES
JM
SC
J
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
CE
GE
CE
GE
GE
G
= 10 Ω non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
= 15 V, T
= 15 V, V
TM
= 250 µA, V
= 1500 µA, V
= 0.8 V
= 0 V
= 0 V, V
= I
C90
Monolithic
, V
CES
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
= 1200V, T
CE
= 0 V
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
J
(T
= 125°C
Advance Technical Information
J
J
J
J
= 25°C
= 125°C
= 125°C
= 25°C, unless otherwise specified)
IXBN 75N170A
1700
min.
I
V
2.5
CM
Characteristic Values
CES
-55 ... +150
-55 ... +150
Maximum Ratings
=
=
typ.
4.5
5.0
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1700
1700
1350
240
100
500
150
±20
±30
30
75
42
10
max.
±200
5.5
1.5 mA
6.0
50
µs
°C
°C
°C
µA
nA
V
V
V
V
A
A
A
A
V
W
V
V
V
V
g
V
I
V
t
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXBN)
G = Gate
E = Emitter
Either Source terminal at miniBLOC can be used
as Main or Kelvin Emitter
C25
fi
High Blocking Voltage
Fast switching
High current handling capability
MOS Gate turn-on
- drive simplicity
Isolation voltage 2500V
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Substitutes for high voltage MOSFETs
Lower conduction losses than MOSFETs
High power density
Easy to mount with 2 screws
Space saving
CES
CE(sat)
E153432
= 1700 V
=
=
=
G
6.0 V
C = Collector
75 A
60 ns
E
98938 (7/02)
C
E
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IXBN75N170A Summary of contents
Page 1
... GE(th 0.8 V CES CE CES ± GES CE(sat) C C90 GE © 2002 IXYS All rights reserved Advance Technical Information IXBN 75N170A Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 240 = 10 Ω 100 1350 CES = 125° 500 -55 ... +150 150 -55 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. ...
Page 2
... 25A - 100V rr R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 7400 340 90 310 = 0 ...