IXGN120N60A3D1 IXYS, IXGN120N60A3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGN120N60A3D1
• Description: IGBT 200A 600V SOT-227B
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGN120N60A3D1

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.35V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 650µA
• Input Capacitance (cies) @ Vce: 14.8nF @ 25V
• Power - Max: 595W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 200
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 260
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10.4
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 36
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
1.000
0.100
0.010
0.001
80
60
40
20
100
0
0.00001
0
0
20
f
= 1 MHz
5
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
80
0.0001
15
I
C
V
100
- Amperes
CE
20
- Volts
120
C ies
140
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
25
160
0.001
30
125ºC
T
180
J
25ºC
= - 40ºC
35
200
Pulse Width - Seconds
220
40
0.01
16
14
12
10
220
200
180
160
140
120
100
8
6
4
2
0
80
60
40
20
0
0
100
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
50
150
CE
J
G
= 120A
= 10mA
= 125ºC
= 1.5Ω
= 300V
200
100
0.1
250
150
Fig. 8. Gate Charge
Q
G
300
200
- NanoCoulombs
V
350
CE
250
- Volts
IXGN120N60A3
IXGN120N60A3D1
400
300
1
IXYS REF: G_120N60A3(86)02-02-09-A
450
350
500
400
550
450
600
10
500
650