APT35GT120JU3 Microsemi Power Products Group, APT35GT120JU3 Datasheet - Page 4

• Manufacturer Part Number: APT35GT120JU3
• Description: IGBT 1200V 55A 260W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT35GT120JU3

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 2.53nF @ 25V
• Power - Max: 260W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

70
60
50
40
30
20
10
70
60
50
40
30
20
10
8
7
6
5
4
3
2
0.45
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
0
0
0.5
0.4
0.3
0.2
0.1
10
0.00001
0
5
0
V
V
I
T
C
J
CE
GE
= 35A
= 125°C
15
= 600V
Output Characteristics (V
=15V
6
0.05
0.9
0.7
0.3
0.1
0.5
Transfert Characteristics
20
Gate Resistance (ohms)
1
T
7
J
25
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
30
8
V
V
CE
GE
2
(V)
T
35
(V)
J
9
=25°C
40
Eon
T
10
GE
J
=125°C
3
T
45
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
Eoff
0.001
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11
50
Single Pulse
55
12
4
0.01
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
14
12
10
0
0
8
6
4
2
0
0
10
0
V
T
R
V
T
GE
J
T
Energy losses vs Collector Current
G
V
R
=125°C
CE
J
=27Ω
APT35GT120JU3
0.1
J
GE
G
20
=15V
= 125°C
Reverse Safe Operating Area
= 125°C
= 600V
= 27Ω
= 15V
400
1
Output Characteristics
30
V
GE
40
V
=17V
I
V
C
800
CE
CE
(A)
2
(V)
(V)
1
50
IGBT
Eon
1200
V
60
GE
3
V
=15V
V
Eoff
GE
GE
70
=13V
=9V
1600
10
80
4
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