IXSN80N60BD1 IXYS, IXSN80N60BD1 Datasheet
IXSN80N60BD1
Specifications of IXSN80N60BD1
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IXSN80N60BD1 Summary of contents
Page 1
... CES ± Note 1 CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved IXSN 80N60BD1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ±30 160 100 80 300 = 5 Ω 160 0.8 V CES = 125° 420 ...
Page 2
... Note: 2. Remarks: Switching times may increase for V (Clamp) > 0.8 • higher T CE CES IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage 160A Volts G E © 2004 IXYS All rights reserved 300 270 240 210 180 150 120 9V 7V 1.8 2.1 2.4 2.7 3 1.6 1.5 1.4 1.3 1.2 9V 1.1 1.0 0.9 7V 0.8 0.7 1.8 2 ...
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... C 225 200 I = 40A C 175 150 125 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 240 280 320 120 140 160 G 275 250 225 ...
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... C 150 125 100 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts C E 1.0 0.1 0.0 1 © 2004 IXYS All rights reserved 160A 40A 160A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXSN 80N60BD1 Fig ...
Page 6
... Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4000 T = 100° 300V nC R 3000 ...