STTH12010TV1 STMicroelectronics, STTH12010TV1 Datasheet - Page 4

• Manufacturer Part Number: STTH12010TV1
• Description: DIODE FAST REC 1000V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH12010TV1

• Voltage - Forward (vf) (max) @ If: 2V @ 60A
• Current - Reverse Leakage @ Vr: 20µA @ 1000V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 115ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Characteristics
4/8
Figure 5.
Figure 7.
1000
1.50
1.25
1.00
0.75
0.50
900
800
700
600
500
400
300
200
100
0
0
S factor
0
t (ns)
rr
I
F
V
T
= 2 x I
j
50
R
50
=125°C
=600V
F(AV)
Reverse recovery time versus
dI
Softness factor versus
dI
I
100
F
100
= 2 x I
F
F
/dt (typical values)
/dt (typical values)
F(AV)
150
150
dI /dt(A/µs)
F
200
200
I
F
= I
F(AV
250
250
)
dI /dt(A/µs)
F
300
300
350
350
I
F
=0.5 x I
400
400
V
T
j
R
=125°C
F(AV)
=600V
450
450
500
500
Figure 6.
Figure 8.
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
25
Q (µC)
0
rr
V
T
j
50
R
=125°C
=600V
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
100
F
S
I
Q
50
RM
/dt (typical values)
factor
RR
150
200
t
RR
dI /dt(A/µs)
250
75
F
I
F
= 2 x I
300
F(AV)
350
T (°C)
I
F
j
= I
100
Reference: T
STTH12010TV
F(AV)
400
V
I
F
R
I
= I
=600V
F
=0.5 x I
F(AV)
j
=125°C
450
F(AV)
500
125