STTH200L04TV1 STMicroelectronics, STTH200L04TV1 Datasheet - Page 3

• Manufacturer Part Number: STTH200L04TV1
• Description: DIODE ULT FAST 400V ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH200L04TV1

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100A
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 100ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Parallel
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1.2 V at 100 A
• Recovery Time: 100 ns
• Forward Continuous Current: 120 A
• Max Surge Current: 900 A
• Reverse Current Ir: 100 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Package Insulation Voltage: 2500 VRMS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6089-5

STTH200L04TV1
Figure 1.
Figure 3.
Figure 5.
180
160
140
120
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
300
250
200
150
100
80
60
40
20
50
1.E-03
0
0
0
0
rr
Single pulse
10
50
20
Conduction losses versus
average forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse recovery time versus
dI
100
30
1.E-02
F
δ=0.05
/dt (typical values, per diode)
40
150
50
200
60
dI F /dt(A/µs)
δ=0.1
1.E-01
70
I F(AV) (A)
250
t P (s)
80
δ=0.2
300
90 100 110 120 130 140 150
350
1.E+00
400
δ
δ=0.5
=tp/T
V
T
I
j
F
R
=125°C
=I
=200V
450
T
F(AV)
δ=1
1.E+01
tp
500
Figure 2.
Figure 4.
Figure 6.
50
45
40
35
30
25
20
15
10
3500
3000
2500
2000
1500
1000
200
180
160
140
120
100
500
80
60
40
20
5
0
0
0
0
0.0
I
0
V
T
I
j
F
R
=125°C
rr
=I
=200V
V
T
50
I
F(AV)
j
F
R
=125°C
=I
=200V
50
F(AV)
0.2
V FM (V)
100
Forward voltage drop versus
forward current (per diode)
Peak reverse recovery current
versus dI
diode)
Reverse recovery charges versus
dI
100
F
/dt (typical values, per diode)
(Typical values)
(Typical values)
0.4
150
150
T
T
j
j
=150°C
=150°C
(Maximum values)
(Maximum values)
200
200
dI F /dt(A/µs)
T
T
j
j
=150°C
=150°C
0.6
F
dI F /dt(A/µs)
/dt (typical values, per
250
250
0.8
300
300
350
350
1.0
Characteristics
400
(Maximum values)
400
T
1.2
j
=25°C
450
450
500
500
1.4
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