STTH16003TV1 STMicroelectronics, STTH16003TV1 Datasheet - Page 3

• Manufacturer Part Number: STTH16003TV1
• Description: DIODE SECONDARY DUAL 300V ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH16003TV1

• Voltage - Forward (vf) (max) @ If: 1.2V @ 80A
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 300V
• Reverse Recovery Time (trr): 80ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5410-5; STTH16003TV1

STTH16003
Table 5.
Figure 1.
Figure 3.
Symbol
100
1.0
0.8
0.6
0.4
0.2
0.0
S
90
80
70
60
50
40
30
20
10
1E-3
V
I
0
factor
RM
t
t
FP
rr
fr
0
P1(W)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
10
Reverse recovery time
Forward recovery time
Forward recovery voltage
Reverse recovery current
Recovery characteristics
20
Conduction losses versus
average current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
1E-2
30
Parameter
δ = 0.05
40
IF(av) (A)
δ = 0.1
tp(s)
50
1E-1
60
δ = 0.2
70
T
T
T
1E+0
δ
δ
=tp/T
=tp/T
δ = 0.5
j
j
j
80
= 25 °C
= 25 °C
= 125 °C
T
T
90 100
δ = 1
tp
tp
5E+0
Test conditions
I
I
I
V
I
V
I
V
F
R
F
F
F
R
FR
cc
= 0.5 A, I
= 1 A, dI
= 80 A
= 60 A, dI
= 1 A
Figure 2.
Figure 4.
= 30 V
= 200 V
200
100
30
25
20
15
10
= 1.1 x V
10
5
0
1
0
0.0
IRM(A)
IFM(A)
VR=200V
Tj=125°C
F
50
rr
/dt = 50 A/µs,
F
0.2
dI
/dt = 200 A/µs,
= 0.25 A
Fmax
F
/dt = 200 A/µs
100 150 200 250 300 350 400 450 500
Forward voltage drop versus
forward current (maximum values,
per diode)
Peak reverse recovery current
versus dI
diode)
0.4
(Typical values)
Tj=125°C
IF=0.5xIF(av)
0.6
F
0.8
/dt (90% confidence, per
dIF/dt(A/µs)
Min.
IF=IF(av)
1.0
Tj=125°C
VFM(V)
Typ
0.3
1.2
IF=2xIF(av)
Characteristics
Tj=25°C
1.4
Max.
1000
60
80
16
5
1.6
Unit
ns
ns
ns
V
A
-
1.8
3/7