DSS2X41-01A IXYS, DSS2X41-01A Datasheet - Page 2

• Manufacturer Part Number: DSS2X41-01A
• Description: DIODE SCHOTTKY 100V2X40A SOT-227
• Manufacturer: IXYS

Specifications of DSS2X41-01A

• Voltage - Forward (vf) (max) @ If: 880mV @ 40A
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Current - Average Rectified (io) (per Diode): 40A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 80 A
• Max Surge Current: 450 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 0.83 V at 40 A
• Maximum Reverse Leakage Current: 1000 uA
• Maximum Power Dissipation: 115 W
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: Screw
• Vrrm, (v): 100
• Ifavm, D = 0.5, Total, (a): 80
• Ifavm, D = 0.5, Per Diode, (a): 40
• @ Tc, (°c): 110
• Vf, Max, Tvj =125°c, (v): 0.70
• @ If, (a): 40
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 1.10
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSS2X4101A

IXYS reserves the right to change limits, conditions and dimensions.
© 2005 IXYS All rights reserved
Z
I
F
I
thJC
0.01
K/W
100
F(AV)
0.1
10
80
60
40
20
A
A
0.001
1
0
1
0.0
0
Fig. 1 Max. forward voltage
Fig. 4 Avg. forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
D=0.5
0.33
0.25
0.17
0.08
0.2
40
drop characteristics
vs. case temperature T
(Thermal Resistance)
0.4
d=0.5
Single Pulse
80
0.6
0.01
150°C
125°C
T
T
25°C
VJ
C
0.8
V
120
=
DC
F
C
1.0
F(AV)
160
V
C
0.1
P
0.001
I
(AV)
R
0.01
0.1
mA
60
50
40
30
20
10
10
W
1
0
0
0
Fig. 2 Typ. reverse current I
Fig. 5 Forward power loss characteristics
125°C
T
75°C
25°C
100°C
50°C
VJ
=150°C
10
20
versus reverse voltage
20
40
1
30
40
I
60
F(AV)
t
50
V
DSS 2x41-01A
R
s
80
d =
DC
0.5
0.33
0.25
0.17
0.08
60
V
R
100
10
A
10000
I
FSM
C
1000
T
100
pF
A
0
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
20
vs. reverse voltage V
DSS 2x41-01A
40
60
V
t
T
R
P
VJ
80
= 25°C
µs
V
R
2 - 2
100
T