SI1002-C-GM Silicon Laboratories Inc, SI1002-C-GM Datasheet - Page 65
SI1002-C-GM
Manufacturer Part Number
SI1002-C-GM
Description
IC TXRX MCU + EZRADIOPRO
Manufacturer
Silicon Laboratories Inc
Specifications of SI1002-C-GM
Package / Case
42-QFN
Frequency
240MHz ~ 960MHz
Data Rate - Maximum
256kbps
Modulation Or Protocol
FSK, GFSK, OOK
Applications
General Purpose
Power - Output
13dBm
Sensitivity
-121dBm
Voltage - Supply
1.8 V ~ 3.6 V
Current - Receiving
18.5mA
Current - Transmitting
30mA
Data Interface
PCB, Surface Mount
Memory Size
64kB Flash, 4kB RAM
Antenna Connector
PCB, Surface Mount
Number Of Receivers
1
Number Of Transmitters
1
Wireless Frequency
240 MHz to 960 MHz
Interface Type
UART, SMBus, SPI, PCA
Output Power
13 dBm
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Maximum Supply Current
4.1 mA
Minimum Operating Temperature
- 40 C
Modulation
FSK, GFSK, OOK
Protocol Supported
C2, SMBus
Core
8051
Program Memory Type
Flash
Program Memory Size
64 KB
Data Ram Size
4352 B
Supply Current (max)
4.1 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1878-5
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Table 4.14. DC-DC Converter (DC0) Electrical Characteristics
VBAT = 0.9 to 1.8 V,
Table 4.15. VREG0 Electrical Characteristics
V
Input Voltage Range
Input Inductor Value
Input Inductor Current
Rating
Inductor DC Resistance
Input Capacitor Value
Output Voltage Range
Output Load Regulation
Output Current
(based on output power
spec)
Output Power
Bias Current
Clocking Frequency
Maximum DC Load Current
During Startup
Capacitance Connected to
Output
Input Voltage Range
Bias Current
DD
= 1.8 to 3.6 V,
Parameter
Parameter
–40 to +85 °C unless otherwise specified.
–40 to +85 °C unless otherwise specified.
Normal, Idle, Suspend, or Stop Mode
Target Output = 2.0 V, 1 to 30 mA
Target Output = 3.0 V, 1 to 20 mA
Source Impedance < 2
from VDD/DC+ supply
Target Output = 1.8 V
Target Output = 1.9 V
Target Output = 2.0 V
Target Output = 2.1 V
Target Output = 2.1 V
Target Output = 2.7 V
Target Output = 3.0 V
Target Output = 3.3 V
Target Output = 1.8 V
Target Output = 1.9 V
Target Output = 2.0 V
Target Output = 2.1 V
Target Output = 2.4 V
Target Output = 2.7 V
Target Output = 3.0 V
Target Output = 3.3 V
from VBAT supply
Conditions
Conditions
Rev. 1.0
Min
1.8
—
Si1000/1/2/3/4/5
1.73
1.83
1.93
2.03
2.30
2.60
2.90
3.18
Min
500
250
1.6
0.9
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.80
1.90
2.00
2.10
2.40
2.70
3.00
3.30
±0.3
20
Typ
—
680
100
4.7
1.0
2.4
1.0
±1
80
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
Max
1.97
2.07
2.17
2.50
2.80
3.10
3.42
1.87
900
3.6
1.8
0.5
3.2
2.0
36
34
32
30
27
24
21
19
65
—
—
—
—
—
—
—
—
1
Units
Units
MHz
mW
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
nH
µA
µF
µF
µA
%
%
V
V
V
V
V
V
V
V
V
V
65
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