SI4737-C40-GUR Silicon Laboratories Inc, SI4737-C40-GUR Datasheet - Page 4

• Manufacturer Part Number: SI4737-C40-GUR
• Description: IC RX AM/FM/WB RDS/RBDS 24SSOP
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4737-C40-GUR

• Frequency: 520kHz ~ 1.71MHz, 64MHz ~ 108MHz, 162.4MHz ~ 162.55MHz
• Modulation Or Protocol: AM, FM, WB
• Applications: General Purpose
• Current - Receiving: 19.9mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Features: RSSI Equipped
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 24-SSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Sensitivity: -
• Memory Size: -
• Data Rate - Maximum: -

Si4736/37/38/39-C40
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Note:
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at
2. SSOP devices operate down to V
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4736/37/38/39 devices are high-performance RF integrated circuits with certain pins having an ESD rating of <
3. For input pins SCLK, SEN, SDIO, RST, RCLK, and DCLK.
4. At RF input pins, FMI and AMI.
V
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
DD
= 3.3 V and 25 C unless otherwise stated.
3
3
Parameter
4
2
Parameter
DD
= 2 V at 25 °C.
1,2
Symbol
T
V
Symbol
V
V
T
V
V
I
STG
DDRISE
OP
IORISE
DD
IN
V
IO
IN
V
Rev. 1.0
T
1
DD
IO
A
Test Condition
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
IO
+ 0.3)
1.85
Min
–20
2.7
10
10
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
V
mA
C
C
V
V
V
PK
Unit
µs
µs
C
V
V