CGH40090PP-TB Cree Inc, CGH40090PP-TB Datasheet

BOARD DEMO AMP CIRCUIT CGH40090

CGH40090PP-TB

Manufacturer Part Number
CGH40090PP-TB
Description
BOARD DEMO AMP CIRCUIT CGH40090
Manufacturer
Cree Inc
Type
HEMTr
Datasheet

Specifications of CGH40090PP-TB

Mfg Application Notes
Thermal Performance Guide
Frequency
500MHz ~ 2.5GHz
For Use With/related Products
CGH40090PP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Over 500 MHz - 2.5 GHz
CGH40090PP
90 W, RF Power GaN HEMT
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40090PP, operating
from a 28 volt rail, offers a general purpose, broadband solution to
a variety of RF and microwave applications. GaN HEMTs offer high
efficiency, high gain and wide bandwidth capabilities making the
CGH40090PP ideal for linear and compressed amplifier circuits.
The transistor is available in a 4-lead flange package.
Features
Parameter
Small Signal Gain
Gain at P
Saturated Power
Drain Efficiency at P
Input Return Loss
SAT
Up to 4 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
12 dB Small Signal Gain at 4.0 GHz
100 W Typical P
55 % Efficiency at P
28 V Operation
Use as a Pair of 45 W Transistors
SAT
SAT
500 MHz
SAT
17.6
13.7
66.8
48.5
7.3
Subject to change without notice.
www.cree.com/wireless
1.0 GHz
102.7
15.6
11.7
57.0
23.0
1.5 GHz
(T
14.1
91.4
56.6
14.9
9.2
C
= 25˚C)
of Demonstration Amplifier
2.0 GHz
101.7
12.4
59.2
14.3
7.0
2.5 GHz
12.4
10.4
57.0
37.3
11.3
Units
dB
dB
dB
%
W
1

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CGH40090PP-TB Summary of contents

Page 1

... CGH40090PP Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits ...

Page 2

... Drain Efficiency 6 Output Mismatch Stress VSWR Dynamic Characteristics 7 Input Capacitance C Output Capacitance C Feedback Capacitance C Notes: Measured on wafer prior to packaging. 1 Scaled from PCM data. 2 Measured in CGH40090PP-TB 1 biasing each device at 0 defined as mA. 5 SAT G Drain Efficiency = OUT DC Capacitance values are for each side of the device. ...

Page 3

... V CGH40090PP Gain and Drain Efficiency vs Output Power DD 60 0.5 GHz Gain 0.5 GHz Output Power and Drain Efficiency vs Frequency of the CGH40090PP measured in Broadband Amplifier Circuit CGH40090PP-TB CGH40090PP -Output Power and Drain Efficiency versus Frequency 0.0 0.5 Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 4

... Typical Performance Gain and Input Return Loss vs Frequency from 0.5 GHz to 2.5 GHz in Broadband Amplifier Circuit CGH40090PP-TB Wide Band Amplifier: Gain and Input Return Loss 0.5 Maximum Available Gain and K Factor of the CGH40090PP Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 5

... Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40090PP Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 6

... Simulated Source and Load Impedances Frequency (MHz) 500 1500 2500 Note 1. V Note 2. Optimized for power gain, P Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40090PP Power Dissipation De-rating Curve CGH40090PP CW Power Dissipation De-rating Curve 120 100 Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © ...

Page 7

... CGH40090PP-TB Demonstration CGH40090PP-TB Demonstration Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGH40090PP Rev 3.2 Schematic Amplifier Circuit Outline Amplifier Circuit Cree, Inc. ...

Page 8

... L1,L2,L3, X1,X2 J1 J3, CGH40090PP-TB Demonstration Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGH40090PP Rev 3.2 Bill of Materials Amplifier Circuit Description CAP, 0.5 pF, ± 0.05 pF, 0603, ATC 600S CAP, 27 pF, ± ...

Page 9

... Typical Package S-Parameters for CGH40090PP, Single Side (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.943 -172.11 600 MHz 0.943 -174.35 700 MHz 0.943 -176.10 800 MHz 0.943 -177.56 900 MHz 0.944 -178.82 1.0 GHz 0.944 -179.94 1.1 GHz 0.944 179 ...

Page 10

... Typical Package S-Parameters for CGH40090PP, Single Side (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.952 -173.06 600 MHz 0.952 -175.20 700 MHz 0.952 -176.89 800 MHz 0.952 -178.31 900 MHz 0.952 -179.54 1.0 GHz 0.952 179.35 1.1 GHz 0.952 178 ...

Page 11

... Product Dimensions CGH40090PP (Package Type — 440199) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGH40090PP Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

Page 12

... Cree, RF Components 919.407.5639 Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGH40090PP Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1 ...

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