SBW-5089 Sirenza Microdevices Inc, SBW-5089 Datasheet - Page 2

• Manufacturer Part Number: SBW-5089
• Description: IC AMP HBT 8000MHZ SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SBW-5089

• Current - Supply: 72mA ~ 88mA
• Frequency: 0Hz ~ 8GHz
• Gain: 17dB ~ 19dB @ 3GHz
• Noise Figure: 3.9dB ~ 4.4dB
• P1db: 18.4dBm ~ 19.4dBm
• Package / Case: SOT-89
• Rf Type: Cellular, PCS, GSM, UMTS
• Test Frequency: 1.95GHz
• Voltage - Supply: 4.5V ~ 5.3V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SBW-5089(Z)
Typical Performance at Key Operating Frequencies
2 of 8
Absolute Maximum Ratings
Max Device Current (l
Max Device Voltage (V
Max RF Input Power
Max Dissipated Power
Max Junction Temperature (T
Operating Temperature Range (T
Max Storage Temperature
ESD Rating - Human Body Model
Moisture Sensitivity Level
Test Conditions: V
Output Power at 1dB Compression
Output Third Order Intercept Point
26
23
20
17
14
11
8
5
0
Output Return Loss
Small Signal Gain
Input Return Loss
Reverse Isolation
Parameter
Noise Figure
Parameter
1
S
=8V, I
D
D
)
)
D
=80mA Typ, OIP
P1dB vs. Frequency
2
Frequency(GHz)
J
)
L
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
)
3
Units
dBm
dBm
dB
dB
dB
dB
dB
3
Tone Spacing=1MHz, P
4
6
5
4
3
2
1
0
-40 to + 85
0
Rating
MSL 2
500MHz
0.65
130
150
150
1C
17
6
20.5
36.5
20.2
3.6
26
19
22
5
-40°C
+25°C
+85°C
1
Noise Figure vs. Frequency
6
OUT
850MHz
2
per tone=0dBm. T
Frequency (GHz)
20.3
35.5
20.1
17.5
3.6
26
23
Class
Unit
dBm
mA
°C
°C
°C
W
V
3
39
36
33
30
27
24
21
18
15
12
0
1950MHz 2400MHz 3500MHz 5800MHz
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
19.1
34.0
19.4
L
3.9
4
19
12
23
=25°C, Bias Resistance=39, Z
1
Caution! ESD sensitive device.
5
-40°C
+25°C
+85°C
OIP3 vs. Frequency
2
Frequency (GHz)
18.7
33.0
19.4
3.9
15
11
23
6
3
4
S
30.5
10.5
17.3
17.5
4.1
12
23
=Z
L
=50.
5
-40°C
+25°C
+85°C
DS091130
25.5
13.4
12.5
15.1
10.9
4.3
23
6