MW7IC930NBR1 Freescale Semiconductor, MW7IC930NBR1 Datasheet - Page 3

• Manufacturer Part Number: MW7IC930NBR1
• Description: IC PWR AMP RF 900MHZ TO-272-16
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW7IC930NBR1

• Current - Supply: 340mA
• Frequency: 728MHz ~ 768MHz, 920MHz ~ 960MHz
• Gain: 36.8dB
• P1db: 31W
• Package / Case: TO-272-16
• Rf Type: W-CDMA
• Test Frequency: 940MHz
• Voltage - Supply: 32V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Package Type: TO-272 WB
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 16
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests
f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) V
106 mA, I
on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. V
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
GG
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
DQ2
= 2.25 x V
= 285 mA, P
(2,3)
D
DQ2
DQ2
D
GS(Q)
GS
GS
DS
= 74 μAdc)
= 740 mA)
(In Freescale Test Fixture, 50 ohm system) V
= 0 Vdc)
= 0 Vdc)
= 285 mA)
= 285 mA, Measured in Functional Test)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
out
Frequency
= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability
Characteristic
920 MHz
940 MHz
960 MHz
(1)
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
G
ps
(continued)
36.6
36.8
36.6
Symbol
V
V
V
V
ACPR
(dB)
I
I
I
DS(on)
PAE
GG(Q)
GS(th)
GS(Q)
G
GSS
IRL
DSS
DSS
DQ1
ps
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
= 106 mA, I
PAE (%)
Min
1.2
4.2
0.1
33
14
—
—
—
—
—
—
16.1
16.7
17.3
DQ2
= 285 mA, P
--49.5
--18.7
35.9
16.5
Typ
2.6
5.9
0.3
—
—
—
2
ACPR (dBc)
--48.0
--48.7
--48.6
DD
out
= 28 Vdc, I
= 3.2 W Avg.,
Max
--46
2.7
7.6
0.8
10
38
--9
—
—
1
1
DQ1
IRL (dB)
(continued)
--19.9
--20.8
--19.7
=
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
%
3