MGA-412P8-TR1G Avago Technologies US Inc., MGA-412P8-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-412P8-TR1G
• Description: IC PWR AMP PHEMT GAAS ENH 8-PLCC
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of MGA-412P8-TR1G

• P1db: 24dBm ~ 25.3dBm
• Package / Case: 8-LPCC
• Current - Supply: 40mA
• Frequency: 1.7GHz ~ 3GHz
• Gain: 23dB ~ 25.5dB
• Rf Type: IEEE 802.11b/g, WLAN
• Test Frequency: 2.452GHz
• Voltage - Supply: 3V ~ 3.6V
• Mounting Style: SMD/SMT
• Technology: Power Amplifier
• Number Of Channels: 1
• Operating Frequency: 3000 MHz
• Operating Supply Voltage: 3.3 V
• Maximum Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1825-2; MGA-412P8-TR1G

Figure 1. Id@ 2.452GHz; Nominal = 40mA, USL: 55mA
Figure 3. Gain@ 2.452GHz; Nominal = 25.5dB, LSL: 23 dB
2
Absolute Maximum Rating
Product Consistency Distribution Charts
Symbol
V
P
P
T
T
30
23
dd
in
diss
j
STG
LSL
35
24
Parameter
Device Voltage, RF output to ground
CW RF Input Power (Vdd = 3.3V)
Total Power Dissipation
Junction Temperature
Storage Temperature
25
40
[1]
26
45
Tc=25°C
[2]
27
50
[4,5]
USL
55
28
Units
V
dBm
W
o
o
C
C
Figure 2. P1dB @ 2.452GHz; Nominal = 25.3dBm, LSL: 24dBm
Notes:
4. Distribution data sample size is 500 samples taken from 3 different
5. Measurements are made on production test board, which represents
Absolute Max.
5
10
0.8
150
-65 to 150
24 24.2
LSL
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
a trade-off between optimal Gain and P1dB. Circuit losses have been
de-embedded from actual measurements.
24.6
Thermal Resistance
(Vdd = 3.3V), θjc = 33.3 °C/W
Notes:
1. Operation of this device in excess of any of
2. Board (package belly) temperature, Tb is 25 °C.
3. Thermal resistance measured using 150 °C
these limits may cause permanent damage.
Derate 30mW/ °C for Tb>123.36 °C.
Liquid Crystal Measurement Technique.
25 25.2
[3]
25.6
26