ABA-31563-TR1G Avago Technologies US Inc., ABA-31563-TR1G Datasheet - Page 2

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ABA-31563-TR1G

Manufacturer Part Number
ABA-31563-TR1G
Description
IC AMP RFIC 3.5GHZ 3V SOT-363
Manufacturer
Avago Technologies US Inc.
Type
General Purpose Amplifierr
Datasheet

Specifications of ABA-31563-TR1G

P1db
2.2dBm
Noise Figure
3.8dB ~ 4.8dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
14mA
Frequency
0Hz ~ 3.5GHz
Gain
21.5dB
Rf Type
ISM, Cordless Phones, PCS, 802.16/WiMax, DBS Broadcast Television, TVRO
Test Frequency
2GHz
Voltage - Supply
2.7V ~ 3.5V
Mounting Style
SMD/SMT
Technology
Broadband Amplifier
Number Of Channels
1
Operating Frequency
3500 MHz
Operating Supply Voltage
3 V
Supply Current
16 mA @ 3 V
Maximum Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Manufacturer's Type
Broadband Amplifier
Frequency (max)
3.5GHz
Operating Supply Voltage (typ)
3V
Package Type
SOT-363
Mounting
Surface Mount
Pin Count
6
Noise Figure (typ)
3.8@2000MHzdB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1490-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ABA-31563-TR1G
Manufacturer:
AVG
Quantity:
9 000
Part Number:
ABA-31563-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
2
ABA-31563 Absolute Maximum Ratings
Electrical Specifications
Symbol
Gp
∆Gp
NF
P1dB
OIP3
VSWR
VSWR
Icc
Td
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
RF Input
Figure 1. ABA-31563 Production Test Circuit.
Symbol
V
P
P
T
T
cc
diss
j
STG
in
[1]
[1]
[1]
[1]
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
[1]
[1]
out
in
[1]
[1]
C
block
1 nF
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 3V)
Total Power Dissipation
Junction Temperature
Storage Temperature
Parameter and Test Condition
Power Gain (|S
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
T
c
= +25°C, Z
21
|
2
)
[3]
C
bypass
100 pF
o
f = 0.1 ~ 2.5 GHz
= 50 Ω, P
f = 0.1 ~ 3.5 GHz
RFC
33 nH
C
[1]
1 nF
block
in
= -30 dBm, V
1000 pF
C
bypass
RF Output
Vcc
Units
V
dBm
W
°C
°C
cc
= 3V, Freq = 2 GHz, unless stated otherwise.
Absolute Max.
6
15
0.3
150
-65 to 150
Units
dB
dB
dB
dBm
dBm
mA
ps
Min.
20.0
<1.5
Thermal Resistance
θ
Notes:
1. Operation of this device in excess of any
2. Thermal resistance measured using 150°C
3. Board (package belly) temperature, Tc, is
j-c
= 125°C/W
of these limits may cause permanent
damage.
Liquid Crystal Measurement Technique.
25°C. Derate 2.3 mW/°C for Tc > 120.8°C.
Typ.
0.2
1.3
2.2
13.1
<1.5
14
140
21.5
3.8
Max.
4.8
16
[2]
(Vcc = 3V)
Std Dev.

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