ABA-32563-TR1G Avago Technologies US Inc., ABA-32563-TR1G Datasheet - Page 2

• Manufacturer Part Number: ABA-32563-TR1G
• Description: IC AMP RFIC 2.5GHZ 3V SOT-363
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of ABA-32563-TR1G

• P1db: 8.4dBm
• Noise Figure: 3.5dB
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Current - Supply: 37mA
• Frequency: 0Hz ~ 2.5GHz
• Gain: 19dB
• Rf Type: ISM, Cordless Phones, PCS, 802.16/WiMax, DBS Broadcast Television, TVRO
• Test Frequency: 2GHz
• Voltage - Supply: 3V
• Mounting Style: SMD/SMT
• Technology: Broadband Amplifier
• Number Of Channels: 1
• Operating Frequency: 2500 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 42.5 mA @ 3 V
• Maximum Power Dissipation: 600 mW
• Maximum Operating Temperature: + 150 C
• Manufacturer's Type: Broadband Amplifier
• Frequency (max): 2.5GHz
• Operating Supply Voltage (typ): 3V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 3.5@2000MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1491-2

RF Input
2
ABA-32563 Absolute Maximum Ratings
Electrical Specifications
T
Symbol
Gp
∆Gp
NF
P1dB
OIP3
VSWR
VSWR
Icc
Td
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
Figure 1. ABA-32563 Production Test Circuit.
Symbol
V
P
P
T
T
c
cc
diss
j
STG
in
= +25°C, Z
[1]
[1]
[1]
[1]
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
[1]
[1]
out
in
[1]
[1]
C
1 nF
block
o
= 50 Ω, P
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 3V)
Total Power Dissipation
Junction Temperature
Storage Temperature
Parameter and Test Condition
Power Gain (|S
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
in
= -30 dBm, V
21
C
|
2
bypass
100 pF
[3]
cc
)
= 3V, Freq = 2 GHz, unless stated otherwise.
f = 0.1 ~ 1.5 GHz
f = 0.1 ~ 2.5 GHz
RFC
33 nH
C
1 nF
block
[1]
1000 pF
C
bypass
RF Output
Vcc
Units
V
dBm
W
°C
°C
Absolute Max.
6
15
0.6
150
-65 to 150
Units
dB
dB
dB
dBm
dBm
mA
ps
Min.
17.5
Thermal Resistance
θ
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using 150°C
3. Board (package belly) temperature, Tc, is
j-c
these limits may cause permanent damage.
Liquid Crystal Measurement Technique.
25°C. Derate 8.1 mW/°C for Tc > 120.8°C.
= 124.3°C/W
Typ.
19.0
1.0
3.0
8.4
19.5
<1.5
37
140
3.5
<1.5
Max.
4.4
42.5
[2]
(Vcc = 3V)
Std Dev.