ALD1101SAL Advanced Linear Devices Inc, ALD1101SAL Datasheet - Page 3

• Manufacturer Part Number: ALD1101SAL
• Description: MOSFET 2N-CH 13.2V 40MA 8SOIC
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1101SAL

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1V @ 10µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Other names: 1014-1003

ALD1101A/ALD1101B
ALD1101
1 x10
5 x10
2 x10
1 x10
5 x10
2 x10
1 x10
10000
1000
100
160
120
80
40
10
0
5
4
4
4
3
3
3
0
0
0
R
T
DS (ON)
V
V
T
V
f = 1KHz
FORWARD TRANSCONDUCTANCE
A
V
T
A
DS
BS
BS
A
BS
= +125 C
vs. DRAIN-SOURCE VOLTAGE
= +25 C
= 25 C
OUTPUT CHARACTERISTICS
= 0.2V
= 0V
2
= 0V
2
2
= 0V
DRAIN -SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN-SOURCE VOLTAGE (V)
vs. GATE - SOURCE VOLTAGE
4
4
4
I
T
DS
A
TYPICAL PERFORMANCE CHARACTERISITCS
= +25 C
= 1mA
6
6
6
V
GS
8
8
8
= 12V
I
DS
10V
T
6V
4V
2V
8V
A
= 10mA
= +125 C
10
10
10
Advanced Linear Devices
12
12
12
10
10
10
X
X
X
10
10
10
20
15
10
-12
-8
-9
-4
5
0
8
4
0
-6
-160
-50
0
V
V
V
BS
DS
GS
-25
TRANSFER CHARACTERISTIC
V
T
= 0V
BS
A
= +12V
= V
0.8
OFF DRAIN - CURRENT vs.
LOW VOLTAGE OUTPUT
DRAIN -SOURCE VOLTAGE (mV)
= 25 C
WITH SUBSTRATE BIAS
-80
= 0V
GATE - SOURCE VOLTAGE (V)
BS
CHARACTERISTICS
0
= 0V
-2V
TEMPERATURE
TEMPERATURE ( C)
1.6
+25
-4V
V
GS
0
-6V
= 12V
+50
2.4
-8V
-10V
-12V
+75
80
V
T
3.2
GS
A
+100
= 25 C
= V
4V
6V
2V
3
DS
+125
160
4.0