ALD1102PAL Advanced Linear Devices Inc, ALD1102PAL Datasheet - Page 2

• Manufacturer Part Number: ALD1102PAL
• Description: MOSFET 2P-CH 13.2V 16MA 8PDIP
• Manufacturer: Advanced Linear Devices Inc

Specifications of ALD1102PAL

• Package / Case: 8-DIP (0.300", 7.62mm)
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 13.2V
• Vgs(th) (max) @ Id: 1.2V @ 10µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.004 S
• Drain-source Breakdown Voltage: 13.2 V
• Gate-source Breakdown Voltage: 13.2 V
• Continuous Drain Current: - 16 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1006

ALD1102A/ALD1102B
ALD1102
OPERATING ELECTRICAL CHARACTERISTICS
T
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
Transconductance G
A
Parameter
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature Drift
On Drain Current
Mismatch
Output
Conductance
Drain Source
ON Resistance
Drain Source
ON Resistance
Mismatch
Drain Source
Breakdown
Voltage
Off Drain Current
Gate Leakage
Current
Input
Capacitance
GS1
= 25 C unless otherwise specified
- V
GS2
Symbol
V
V
TC
I
G
R
BV
I
I
C
DS (ON)
DS(OFF)
GSS
G
R
T
OS
DS(ON)
ISS
fs
OS
VT
DS(ON)
DSS
fs
GS
DS
-0.4
-12
Min
-8
PA, SA package
DA package
2
1102A
Typ
-0.7
-1.3
500
180
-16
0.5
0.5
0.1
4
1
6
Max
-1.2
270
50
10
10
2
4
4
Advanced Linear Devices
Min
-0.4
-12
-8
2
1102B
Typ
-0.7
-1.3
500
180
-16
0.5
0.5
0.1
4
1
6
Max
-1.2
270
50
10
10
5
4
4
-0.4
Min
-12
-8
2
1102
-0.7
-1.3
Typ
500
180
-16
0.5
0.5
0.1
4
1
6
Max
-1.2
270
10
50
10
10
4
4
Unit
V
mV
mV/ C
mA
mmho
%
%
V
nA
pA
nA
pF
mho
A
Conditions
I
I
V
V
V
V
V
I
V
T
V
T
DS
DS
DS
GS
DS
DS
DS
DS
DS
A
DS
A
Test
= 125 C
= 125 C
= -10 A V
= -100 A V
= -10 A V
=-12V V
= V
= -5V I
= -5V I
= -0.1V V
= -0.1V V
=0V V
DS
-55 C to +125 C
-65 C to +150 C
= -5V
DS
DS
GS
0 C to +70 C
GS
GS
GS
= -10mA
GS
GS
= -10mA
=-12V
GS
= 0V
=0V
= V
= -5V
= -5V
500 mW
= V
+260 C
-13.2V
-13.2V
DS
DS
2