MCP6072T-E/MNY Microchip Technology, MCP6072T-E/MNY Datasheet - Page 4

• Manufacturer Part Number: MCP6072T-E/MNY
• Description: IC OPAMP 1.2MHZ 1.8V 8-TDFN
• Manufacturer: Microchip Technology

Specifications of MCP6072T-E/MNY

• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Slew Rate: 0.5 V/µs
• Gain Bandwidth Product: 1.2MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 150µV
• Current - Supply: 110µA
• Current - Output / Channel: 28mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 6 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MCP6072T-E/MNYTR

MCP6071/2/4
TABLE 1-1:
TABLE 1-2:
TABLE 1-3:
DS22142B-page 4
Electrical Characteristics: Unless otherwise indicated, V
V
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, V
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
OUT
OUT
Note 1: The internal junction temperature (T
≈ V
≈ V
DD
DD
Figure 2-13
/2, V
/2, V
Parameters
Parameters
Parameters
L
L
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
= V
= V
DD
DD
shows how V
/2 and R
/2, R
L
= 10 kΩ to V
L
= 10 kΩ to V
CMR
V
OL,
changed across temperature.
Sym
A
V
I
I
SC
L
DD
OL
Q
V
GBWP
Sym
and C
θ
θ
θ
θ
θ
Sym
T
T
OH
PM
SR
E
JA
JA
JA
JA
JA
e
i
A
A
L
ni
ni
ni
J
. (Refer to
) must not exceed the absolute maximum specification of +150°C.
L
V
= 60 pF. (Refer to
SS
Min
1.8
95
50
—
—
Min
+15
Min
-40
-65
—
—
—
—
—
—
—
—
—
—
—
A
DD
DD
Figure
= +25°C, V
= +1.8V to +6.0V, V
= +1.8V to +6.0V and V
Typ
115
±28
110
±7
—
—
220.7
149.5
Typ
1-1).
1.2
0.5
4.3
0.6
52.5
95.3
57
19
Typ
100
—
—
DD
Figure
V
= +1.8 to +6.0V, V
DD
Max
170
Max
6.0
—
—
—
—
—
—
—
—
—
+125
+150
Max
–15
—
—
—
—
—
1-1).
SS
= GND, T
Units
nV/√Hz f = 10 kHz
fA/√Hz
mV
mA
mA
µA
µVp-p
dB
Units
SS
V
MHz
V/µs
Units
°C/W
°C/W
°C/W
°C/W
°C/W
© 2010 Microchip Technology Inc.
°
°C
°C
= GND.
0.2V < V
V
0.5V input overdrive
V
V
I
V
O
SS
A
CM
DD
DD
CM
= 0, V
= +25°C, V
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
= GND, V
Note 1
= 1.8V
= 6.0V
= V
= 0.9V
Conditions
SS
Conditions
OUT
DD
Conditions
DD
= 6.0V
<(V
CM
CM
DD
= V
= V
-0.2V)
DD
DD
/2,
/2,