LM833N/NOPB National Semiconductor, LM833N/NOPB Datasheet - Page 15

• Manufacturer Part Number: LM833N/NOPB
• Description: IC OP AMP DUAL AUDIO 8-DIP
• Manufacturer: National Semiconductor

Specifications of LM833N/NOPB

• Amplifier Type: Audio
• Number Of Circuits: 2
• Slew Rate: 7 V/µs
• Gain Bandwidth Product: 15MHz
• Current - Input Bias: 500nA
• Voltage - Input Offset: 300µV
• Current - Supply: 5mA
• Voltage - Supply, Single/dual (±): ±5 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Bandwidth: 15 MHz
• Common Mode Rejection Ratio: 100
• Current, Input Bias: 500 nA
• Current, Input Offset: 10 nA
• Current, Output: 40 mA
• Current, Supply: 5 mA
• Harmonic Distortion: 0.002 %
• Number Of Amplifiers: Dual
• Package Type: MDIP-8
• Power Dissipation: 500 mW
• Temperature, Operating, Range: -40 to +85 °C
• Voltage, Gain: 110 dB
• Voltage, Input: 10 to 36 V
• Voltage, Noise: 4.5 nV/sqrt Hz
• Voltage, Offset: 0.3 mV
• Voltage, Output, High: 13.5 V
• Voltage, Output, Low: -13.5 V
• Voltage, Supply: ±15 V
• No. Of Channels: 2
• Supply Voltage Range: 10V To 36V
• Load Impedance: 2kohm
• Operating Temperature Range: -40°C To +85°C
• Amplifier Case Style: DIP
• No. Of Pins: 8
• Msl: MSL 1 - Unlimited
• Rohs Compliant: Yes
• Number Of Channels: 2
• Voltage Gain Db: 110 dB
• Common Mode Rejection Ratio (min): 80 dB
• Input Offset Voltage: 5 mV at +/- 15 V
• Supply Current: 8 mA at +/- 15 V
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 85 C
• Maximum Dual Supply Voltage: +/- 18 V
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• Current - Output / Channel: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *LM833N; *LM833N/NOPB; LM833; LM833NNS

Typical Applications
LM833 MDC MWC
DUAL AUDIO OPERATIONAL AMPLIFIER
DIE/WAFER CHARACTERISTICS
SIGNAL NAME
OUTPUT A
INPUT A-
INPUT A+
VEE-
INPUT B+
INPUT B-
OUTPUT B
VCC+
Physical Die Identification
Die Step
Wafer Diameter
Dise Size (Drawn)
Thickness
Min Pitch
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
PAD# NUMBER
Fabrication Attributes
Physical Attributes
(Referenced to die center, coordinates in µm) NC = No Connection
1
2
3
4
5
6
7
8
(Continued)
Die Bond Pad Coordinate Locations (A - Step)
LM833A
A
150mm
1219µm x 1270µm
48mils x 50mils
406µm Nominal
288µm Nominal
-476
-476
-476
476
476
476
-0
X
X/Y COORDINATES
0
Die Layout (A - Step)
15
-212
-500
-500
-500
-212
500
500
500
Y
Bond Pad Opening Size (min)
Bond Pad Metalization
Passivation
Back Side Metal
Back Side Connection
00521854
General Die Information
110
110
110
110
110
110
110
110
X
PAD SIZE
110µm x 110µm
ALUMINUM
VOM NITRIDE
BARE BACK
Floating
x
x
x
x
x
x
x
x
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110
110
110
110
110
110
110
110
Y