MC9S08GT60ACFDE Freescale Semiconductor, MC9S08GT60ACFDE Datasheet - Page 263

• Manufacturer Part Number: MC9S08GT60ACFDE
• Description: IC MCU 60K FLASH 4K RAM 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08GT60ACFDE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN
• Processor Series: S08GT
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 4 KB
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 39
• Number Of Timers: 2
• Operating Supply Voltage: 0 V to 1.8 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: M68EVB908GB60E, M68DEMO908GB60E
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• For Use With: M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device
was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses,
the device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to
V
Low-voltage detection threshold — high range
Low-voltage detection threshold — low range
Low-voltage warning threshold — high range
DD
MM circuit description
HBM circuit description
0 < f
0 < f
Bus
Bus
< 8 MHz
< 20 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Parameter
Parameter
(Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Sheet 1 of 3)
Table A-3. ESD Protection Characteristics
(V
(V
(V
(V
(V
(V
DD
DD
DD
DD
DD
DD
falling)
rising)
falling)
rising)
falling)
rising)
MC9S08GB60A Data Sheet, Rev. 2
Symbol
Symbol
V
V
V
V
V
V
THHBM
THMM
V
LVWH
LVDH
LVDL
RAM
DD
2.08
2.08
2.16
1.80
1.88
2.35
2.35
1.0
Min
1.8
2
Typical
Value
2000
2.19
1.82
1.90
2.40
2.40
200
2.1
Appendix A Electrical Characteristics
1
Max
2.27
1.91
1.99
3.6
3.6
2.2
2.5
2.5
—
Unit
Unit
V
V
V
V
V
V
V
263