DSPIC30F2020-30I/SP Microchip Technology, DSPIC30F2020-30I/SP Datasheet - Page 31

• Manufacturer Part Number: DSPIC30F2020-30I/SP
• Description: IC DSPIC MCU/DSP 12K 28DIP
• Manufacturer: Microchip Technology
• Series: dsPIC™ 30Fr

Specifications of DSPIC30F2020-30I/SP

• Package / Case: 28-DIP (0.300", 7.62mm)
• Core Processor: dsPIC
• Core Size: 16-Bit
• Speed: 30 MIPs
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 21
• Program Memory Size: 12KB (4K x 24)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52713-733, 52714-737, 53276-922, EWDSPIC
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE4000, DM240002, DM300027, DM330011, DM300018, DM183021
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DM300023 - KIT DEMO DSPICDEM SMPS BUCKDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

11.6
Instead of using a Bulk Erase operation, each region of
memory can be individually erased by row. In this case,
all of the code memory, executive memory and
Configuration registers must be erased one row at a
time. The procedure for erasing individual rows of
program memory is quite different from the procedure
for erasing the entire chip. This procedure is detailed in
TABLE 11-5:
© 2010 Microchip Technology Inc.
Step 1: Exit the Reset vector.
0000
0000
0000
Step 2: Initialize NVMADR and NVMADRU to erase code memory and initialize W7 for row address updates.
0000
0000
0000
0000
Step 3: Set NVMCON to erase 1 row of code memory.
0000
0000
Step 4: Unlock the NVMCON to erase 1 row of code memory.
0000
0000
0000
0000
Step 5: Initiate the erase cycle.
0000
0000
0000
0000
0000
—
0000
0000
0000
0000
0000
Command
(Binary)
Row Erasing Program Memory
040100
040100
000000
EB0300
883B16
883B26
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
—
A9E761
000000
000000
000000
000000
SERIAL INSTRUCTION EXECUTION FOR ROW ERASING PROGRAM MEMORY
(Hex)
Data
GOTO 0x100
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
NOP
NOP
Externally time 'P19a' msec
Requirements”)
BCLR NVMCON, #WR
NOP
NOP
NOP
NOP
W6
W6, NVMADR
W6, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
Table
Step 3 must be modified with the appropriate NVMCON
value as per
However, since this method is more time consuming
and does not clear the code-protect bits, it is not
recommended in most cases.
Note 1: Program memory must be erased before
(see
11-5. If a Segment Erase operation is required,
Description
Section 13.0 “AC/DC Characteristics and Timing
writing any data to program memory.
Table
11-2.
DS70284C-page 31