PIC18F23K20-I/SO Microchip Technology, PIC18F23K20-I/SO Datasheet - Page 26

IC PIC MCU FLASH 4KX16 28-SOIC

PIC18F23K20-I/SO

Manufacturer Part Number
PIC18F23K20-I/SO
Description
IC PIC MCU FLASH 4KX16 28-SOIC
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F23K20-I/SO

Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
64MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
24
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
16MIPS
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
CCP, ECCP, EUSART, I2C, MSSP, SPI
Maximum Clock Frequency
64 MHz
Number Of Programmable I/os
25
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PIC18F2XK20/4XK20
4.3
A configuration address may be read and output on
PGD via the 4-bit command, ‘1001’. Configuration data
is read and written in a byte-wise fashion, so it is not
necessary to merge two bytes into a word prior to a
compare. The result may then be immediately
compared to the appropriate configuration data in the
programmer’s memory for verification. Refer to
Section 4.1 “Read Code Memory, ID Locations and
Configuration Bits” for implementation details of
reading configuration data.
4.4
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is read by loading
EEADRH:EEADR with the desired memory location
and initiating a memory read by appropriately configur-
ing the EECON1 register. The data will be loaded into
EEDATA, where it may be serially output on PGD via
the 4-bit command, ‘0010’ (Shift Out Data Holding
register). A delay of P6 must be introduced after the
falling edge of the 8th PGC of the operand to allow
PGD to transition from an input to an output. During this
time, PGC must be held low (see Figure 4-4).
The command sequence to read a single byte of data
is shown in Table 4-2.
TABLE 4-2:
DS41297F-page 26
Step 1: Direct access to data EEPROM.
Step 2: Set the data EEPROM Address Pointer.
Step 3: Initiate a memory read.
Step 4: Load data into the Serial Data Holding register.
Note 1:
Command
4-bit
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0010
Verify Configuration Bits
Read Data EEPROM Memory
The <LSB> is undefined. The <MSB> is the data.
READ DATA EEPROM MEMORY
Data Payload
<MSB><LSB>
OE <AddrH>
0E <Addr>
9E A6
9C A6
6E A9
6E AA
80 A6
50 A8
6E F5
00 00
BCF EECON1, EEPGD
BCF EECON1, CFGS
MOVLW <Addr>
MOVWF EEADR
MOVLW <AddrH>
MOVWF EEADRH
BSF EECON1, RD
MOVF EEDATA, W, 0
MOVWF TABLAT
NOP
Shift Out Data
Advance Information
(1)
FIGURE 4-3:
Core Instruction
No
Move to TABLAT
READ DATA EEPROM
FLOW
Shift Out Data
© 2009 Microchip Technology Inc.
Address
done?
Read
Byte
Start
Done
Set
Yes

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