PIC18F23K20-I/SS Microchip Technology, PIC18F23K20-I/SS Datasheet - Page 20

IC PIC MCU FLASH 4KX16 28-SSOP

PIC18F23K20-I/SS

Manufacturer Part Number
PIC18F23K20-I/SS
Description
IC PIC MCU FLASH 4KX16 28-SSOP
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18F23K20-I/SS

Core Size
8-Bit
Program Memory Size
8KB (4K x 16)
Core Processor
PIC
Speed
64MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
24
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SSOP
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
512Byte
Cpu Speed
64MHz
No. Of Timers
4
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
CCP, ECCP, EUSART, I2C, MSSP, SPI
Maximum Clock Frequency
64 MHz
Number Of Programmable I/os
25
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 11 Channel
Package
28SSOP
Device Core
PIC
Family Name
PIC18
Maximum Speed
64 MHz
Operating Supply Voltage
2.5|3.3 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PIC18F2XK20/4XK20
3.3
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is written by
loading EEADRH:EEADR with the desired memory
location, EEDATA with the data to be written and initiat-
ing a memory write by appropriately configuring the
EECON1 register. A byte write automatically erases the
location and writes the new data (erase-before-write).
When using the EECON1 register to perform a data
EEPROM write, both the EEPGD and CFGS bits must
be cleared (EECON1<7:6> = 00). The WREN bit must
be set (EECON1<2> = 1) to enable writes of any sort
and this must be done prior to initiating a write
sequence. The write sequence is initiated by setting the
WR bit (EECON1<1> = 1).
The write begins on the falling edge of the 24th PGC
after the WR bit is set. It ends when the WR bit is
cleared by hardware.
After the programming sequence terminates, PGC
must be held low for the time specified by parameter
P10 to allow high-voltage discharge of the memory
array.
FIGURE 3-7:
DS41297F-page 20
PGC
PGD
Poll WR bit
Data EEPROM Programming
4-bit Command
1
0
2
0
3
0
4
PGD
0
PGC
P5
DATA EEPROM WRITE TIMING DIAGRAM
BSF EECON1, WR
1
4-bit Command
2
1
0
2
0
15 16
3
0
4
0
P5A
P5
MOVF EECON1, W, 0
2 NOP commands
1
Advance Information
2
PGD = Input
PGD = Input
15 16
P5A
P5A
4-bit Command
1
0
FIGURE 3-6:
2
0
3
0
4
0
Poll WR bit, Repeat until Clear
P5
MOVWF TABLAT
1
(see below)
No
2
P11A
15 16
PROGRAM DATA FLOW
Enable Write
Set Address
Start Write
Sequence
© 2009 Microchip Technology Inc.
Set Data
done?
WR bit
clear?
Start
Done
P5A
Yes
Yes
(see Figure 4-4)
PGD = Output
Shift Out Data
No
P10
16-bit Data
Payload
1
n
2
n

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