sp8m5 ROHM Co. Ltd., sp8m5 Datasheet

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sp8m5

Manufacturer Part Number
sp8m5
Description
4v Drive Nch Pch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
4V Drive Nch+Pch MOSFET
SP8M5
Silicon N-channel / P-channel MOSFET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Power switching, DC / DC converter.
∗MOUNTED ON A CERAMIC BOARD.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 MOUNTED ON A CERAMIC BOARD.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Type
SP8M5
Structure
Features
Packaging specifications
Thermal resistance
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
2500
Rth (ch-a)
TB
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
GSS
I
I
DSS
DP
SP
D
S
D
∗1
∗1
∗2
Nchannel
Limits
±6.0
62.5
±20
±24
1.6
30
24
−55 to +150
Limits
∗A protection diode is included between the gate and
150
∗2
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Equivalent circuit
2
Dimensions (Unit : mm)
SOP8
(8)
(1)
Pchannel
±7.0
−1.6
−30
±20
±28
−28
∗1
1pin mark
°C / W
Unit
(7)
(2)
∗2
(6)
(3)
1.27
( 8 )
( 1 )
0.4
∗1
Unit
°C
°C
W
V
V
A
A
A
A
5.0
(5)
(4)
( 5 )
( 4 )
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
(1) (2) (3) (4)
(8) (7) (6) (5)
Each lead has same dimensions
1.75
0.2
Rev.C
SP8M5
1/5

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sp8m5 Summary of contents

Page 1

... ∗ Tch 150 −55 to +150 Tstg Symbol Limits Unit ∗ ° 62.5 SP8M5 5.0 1.75 0 0.2 1.27 Each lead has same dimensions (6) (5) (8) (7) (6) (5) (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate ∗1 (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate ...

Page 2

... R G ∗ − − 7 ∗ − − =5V 1 ∗ − − =6.0A 2 Min. Typ. Max. Unit ∗ − − =6.4A SP8M5 Conditions =0V DS =0V GS =0V GS =1mA D =10V GS =4.5V GS =4V GS =10V DS 15V DD 15V Conditions =0V GS Rev.C 2/5 ...

Page 3

... V DD ∗ − − = −5V 5 ∗ − − = −7. Min. Typ. Max. Unit − − −1.2 =−1.6A SP8M5 Conditions =0V DS = −1mA D = −10V GS = −4. −4. −10V DS −15V DD −15V Conditions =0V GS Rev.C 3/5 ...

Page 4

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M5 10 Ta=25°C =15V =15V =10V = =10Ω =10Ω Pulsed ...

Page 5

... On-State Resistance vs. Gate-Source Voltage 1000 V GS Pulsed Ta=125°C 100 Ta=75°C Ta=25°C Ta= −25° 0.1 1 DRAIN CURRENT : −I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) SP8M5 8 = −15V 7 = −10V TOTAL GATE CHARGE : Qg (nC) Fig ...

Page 6

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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