NCP5351 ON Semiconductor, NCP5351 Datasheet
NCP5351
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NCP5351 Summary of contents
Page 1
... NCP5351 4 A Synchronous Buck Power MOSFET Driver The NCP5351 is a dual MOSFET gate driver optimized to drive the gates of both high−side and low−side Power MOSFETs in a Synchronous Buck converter. The NCP5351 is an excellent companion to multiphase controllers that do not have integrated gate drivers, such as ON Semiconductor’ ...
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... Thermal Shutdown CO PGND Table 1. Input−Output Truth Table tpdl BG V −V TG DRN DRN Figure 2. Timing Diagram NCP5351 Level Shifter Delay Nonoverlap Control − + Delay Figure 1. Block Diagram CO DRN < 3 < 3 > ...
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... PGND − 10 GND NCP5351 Description The switching node common to the high and low−side FETs. The high−side (TG) driv- er and supply (BST) are referenced to this pin. Driver output to the high−side MOSFET gate. Bootstrap supply voltage input. In conjunction with a Schottky diode to V 1.0 mF ceramic capacitor connected between BST and DRN develops supply voltage for the high− ...
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... Gate) BG Low−Side Driver Output (Bottom Gate & BG Control Input EN Enable Input PGND Ground NOTE: All voltages are with respect to PGND except where noted. NCP5351 Rating Reflow: (SMD styles only) (Note 1) Symbol V max V max R T Human Body Model (Note 2) V ...
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... Duty Cycle < 2.0%, Pulse Width < 100 ms, T Output Resistance (Sourcing 4 Duty Cycle < 2.0%, Pulse Width < 100 ms, T Output Resistance (Sinking 4 NCP5351 < 125 5.0 V; 4.0 V < BST Test Conditions = output switching = output switching = 4 − ...
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... Time) Propagation Delay Time 125 Going Low UNDERVOLTAGE LOCKOUT V Rising 4.5 V, time to BG > 1 Falling 4.0 V, time to BG < 1 NCP5351 < 125 5.0 V; 4.0 V < Test Conditions − 5 125 C DRN J − 5 125 C DRN J − 5 ...
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... GATE1 8 20 PGND GATE2 19 NCP5351 GATE3 18 GATE4 17 GND PGND NCP5351 NTC Near Inductor PGND NCP5351 + 3 BST DRN + BST DRN BST DRN BST DRN ...
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... IC pins, as shown in Figure 4(a), C21 and C17. GATE1 DRVON http://onsemi.com 8 ) after the drain drops below after BG drops below 2.0 V. (See Figure 2 for D32 C21 1.0 mF BAT54 U3 NCP5351 R33 C17 1.0 mF 2.2 ( 80NO2 Q9 80NO2 ...
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... NCP5351 TYPICAL PERFORMANCE CHARACTERISTICS COM HOT −5.0 V Conditions: BST − DRN = 5.0 V; Room Temperature; Oscilloscope referenced to V Figure 5. Top Gate Sinking Current from 0.108 −5 −5.0 V Figure 6. Top Gate Sinking COM HOT −5.0 V Conditions 5 Room Temperature ...
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... NCP5351 TYPICAL PERFORMANCE CHARACTERISTICS +5 1 − Conditions 5 Room Temperature; DRN = 0 V. Figure 9. Bottom Gate Sourcing Current into 0.108 Figure 10. Bottom Gate Sourcing +5 1 − Conditions: BST − DRN = 5.0 V; Room Temperature; DRN = 0 V. Figure 11. Top Gate Sourcing Current into 0.108 W ...
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... TYPICAL PERFORMANCE CHARACTERISTICS +5 1.0 k Gated Pulse Burst (2) + − 4.0 V DRN Conditions 5.0 V; BST − DRN = 5 Room Temperature. Figure 14. Top Gate Rise Time NCP5351 BST 100 nF CO DRN BG Input PGND Pulse + − tpdl BG tpdl TG tpdh TG (non−overlap) tpdh BG (non− ...
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... TYPICAL PERFORMANCE CHARACTERISTICS Conditions 5.0 V; BST − DRN = 5 Room Temperature. Figure 16. Bottom Gate Fall Time +5.0 V Input Pulse Figure 18. Bottom Gate and Top Gate Rise/Fall Time Test NCP5351 = 5.7 nF; Conditions: V LOAD Room Temperature. V BST PGND DRN C3 + − 5.7 nF http://onsemi.com 12 = 5.0 V ...
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... 0.25 (0.010 −Y− SEATING PLANE −Z− 0.25 (0.010 NCP5351 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE 0.10 (0.004 SOLDERING FOOTPRINT 1.52 0.060 7.0 4.0 0.275 0.155 0.6 1.270 0.024 0.050 SCALE 6:1 http://onsemi ...
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... G 0.50 BSC 0.020 BSC H 1.23 1.28 0.048 0.050 J 0.20 REF 0.008 REF K 0.00 0.05 0.000 0.002 L 0.35 0.45 0.014 0.018 M 1.50 BSC 0.059 BSC N 1.50 BSC 0.059 BSC P 0.88 0.93 0.035 0.037 R 0.60 0.80 0.024 0.031 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCP5351/D ...