LT1001A Advanced Semiconductor, LT1001A Datasheet
LT1001A
Manufacturer Part Number
LT1001A
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
Advanced Semiconductor
Datasheet
1.LT1001A.pdf
(1 pages)
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
DESCRIPTION:
The
Frequency Transistor Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
MAXIMUM RATINGS
CHARACTERISTICS
P
T
SYMBOL
V
T
I
DISS
STG
V
CE
JC
C
BV
BV
BV
J
G
NPN SILICON HIGH FREQUENCY TRANSISTOR
ASILT1001A
CE(SAT)
I
h
C
NF
CBO
Umax
f
FE
CEO
CBO
EBO
cb
t
2.5 W @ T
-65 °C to +200 °C
-65 °C to +200 °C
I
I
I
V
V
I
V
V
V
V
C
C
E
C
CB
CE
CE
CB
CE
CE
= 5.0 mA
= 1.0 mA
= 100 A
= 50 mA
70 °C/W
= 10 V
= 5.0 V
= 14 V
= 10 V
= 8.0 V
= 14 V
200 mA
is a High
20 V
C
T
TEST CONDITIONS
= 50
A
= 25 °C
I
I
I
I
B
I
C
C
C
C
O
= 5.0 mA
= 50 mA
= 90 mA
C
= 50 mA
= 90 mA
Specifications are subject to change without notice.
f = 300 MHz
f = 300 MHz
f = 1.0 MHz
f = 300 MHz
MINIMUM
3.5
20
40
70
DIM
A
B
C
D
E
F
G
H
PACKAGE STYLE TO-39
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.016 / 0.407
MINIMUM
inches / mm
TYPICAL
1 = EMITTER
3 = COLLECTOR(CASE)
Ø A
G
F
500
3.0
2.5
15
B
.500 / 12.700
.200 / 5.080
E
NONE
H
45°
MAXIMUM
2 = BASE
Ø D
C
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
.020 / 0.508
MAXIMUM
inches / mm
300
1.6
50
LT1001A
UNITS
GHz
mV
dB
dB
pF
---
REV. A
V
V
V
A
1/1
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