KSD1589 Fairchild Semiconductor, KSD1589 Datasheet

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KSD1589

Manufacturer Part Number
KSD1589
Description
NPN Silicon Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
KSD1589-Y
Manufacturer:
KEC
Quantity:
30 000
Part Number:
KSD1589YTU
Manufacturer:
APT
Quantity:
20 000
©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
• Complement to KSB1098
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
* PW 10ms, Duty Cycle 50%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
I
P
P
T
T
h
h
FE
V
V
V
I
I
I
V
V
t
t
t
CP
C
B
CBO
ON
stg
f
J
STG
FE2
C
C
CBO
CEO
EBO
CE
BE
Symbol
FE1
Symbol
(sat)
(sat)
Classification
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*DC Current Gain
*Collector-Emitter Saturation Voltage
Collector Cut-off Current
Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Parameter
a
C
T
=25 C)
=25 C)
C
2000 ~ 5000
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
R
KSD1589
V
V
V
I
I
V
I
R
C
C
B1
CB
CE
CE
CC
L
= 3A, I
= 3A, I
= 16.7
= - I
Test Condition
= 100V, I
= 2V, I
= 2V, I
= 50V, I
B2
B
B
= 3mA
= 3mA
= 3mA
C
C
3000 ~ 7000
C
= 3A
= 5A
E
= 3A
= 0
O
1
1.Base
Min.
500
2K
- 55 ~ 150
2.Collector
Value
150
100
150
0.5
1.5
20
5
8
7
TO-220F
Typ.
6K
0.9
1.6
3.5
1.2
1
5000 ~ 15000
Max.
3.Emitter
15K
1.5
Y
1
2
Rev. A, February 2000
Units
W
W
Units
V
V
V
A
A
A
C
C
V
V
A
s
s
s

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KSD1589 Summary of contents

Page 1

... Base-Emitter Saturation Voltage BE t Turn ON Time ON t Storage Time stg t Fall Time f * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSD1589 T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition V = 100V ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2000 Fairchild Semiconductor International 10k 0.4mA 0.35mA 100 0.3mA 0.001 100 Ic = 1000 I ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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