KSC2786 Fairchild Semiconductor, KSC2786 Datasheet

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KSC2786

Manufacturer Part Number
KSC2786
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
TV PIF Amplifier, FM Tuner RF Amplifier,
Mixer, Oscillator
• High Current Gain Bandwidth Product : f
• High Power Gain : G
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
NF
G
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
BE
CE
ob
c·rbb’
PE
CBO
CEO
EBO
Symbol
(on)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Time Constant
Noise Figure
Power Gain
h
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
PE
=22dB at f=100MHz
Parameter
T
T
a
=25 C unless otherwise noted
=600MHz (TYP)
40 ~ 80
T
Parameter
a
R
=25 C unless otherwise noted
KSC2786
I
I
I
V
V
V
V
I
V
V
V
f=31.9MHz
V
R
V
f=100MHz
C
C
E
C
CB
EB
CE
CE
CE
CB
CE
CE
S
CE
=10 A, I
=5mA, I
=10 A, I
=10mA, I
=50 , f=100MHz
=4V, I
=30V, I
=6V, I
=6V, I
=6V, I
=6V, I
=6V, I
=6V, I
=6V, I
Test Condition
C
B
C
C
C
E
C
C
C
C
E
=0
=0
=0, f=1MHz
E
=1mA
=1mA
B
=1mA
=1mA
=1mA
=1mA
=0
=0
=0
=1mA
70 ~ 140
O
1.Emitter 2. Collector 3. Base
Min.
400
30
20
40
18
1
4
-55 ~ 150
Value
250
150
30
20
20
4
Typ.
0.72
600
0.1
1.2
3.0
12
22
120 ~ 240
TO-92S
Max.
240
0.1
0.1
0.3
5.0
15
Y
Rev. A2, September 2002
Units
mW
mA
V
V
V
C
C
Units
MHz
dB
dB
pF
ps
V
V
V
V
V
A
A

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KSC2786 Summary of contents

Page 1

... T C Output Capacitance ob C Collector-Base Time Constant c·rbb’ NF Noise Figure G Power Gain PE h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation KSC2786 =600MHz (TYP =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =5mA ...

Page 2

... Figure 1. Static Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC Current Gain 10 V (sat 0.1 V (sat) CE 0.01 0 [mA], COLLECTOR CURRENT C Figure 5. Saturation Voltage ©2002 Fairchild Semiconductor Corporation I = 110 100 ...

Page 3

... MHz -b re 0.5 0 [mA], COLLECTOR CURRENT C Figure 9. yre - f 1000 g ib 100 0 [mA], COLLECTOR CURRENT C Figure 11. yib - f ©2002 Fairchild Semiconductor Corporation (Continued) 1000 100 MHz 100 10.7 MHz 100 0 0.1 0.01 10 100 0.1 1000 10.7 MHz ...

Page 4

... FREQUENCY Figure 15. yfe - 0 [mA], COLLECTOR CURRENT C Figure 17. Power Gian & NF ©2002 Fairchild Semiconductor Corporation (Continued 100 MHz 1 10.7 MHz -g rb 10.7 MHz 0.1 0.01 10 100 0.1 0.01 1000 ...

Page 5

... Typical Characteristics ©2002 Fairchild Semiconductor Corporation (Continued) Rev. A2, September 2002 ...

Page 6

... Package Dimensions 4.00 0.66 MAX. 0.49 0.10 1.27TYP [1.27 0.20] 3.72 2.86 0.20 ©2002 Fairchild Semiconductor Corporation TO-92S 0.20 1.27TYP [1.27 0.20] 0.20 2.31 0.20 +0.10 0.35 –0.05 Dimensions in Millimeters Rev. A2, September 2002 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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