IRL530NS International Rectifier, IRL530NS Datasheet
IRL530NS
Specifications of IRL530NS
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IRL530NS Summary of contents
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... Advanced Process Technology Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
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... IRL530NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 3. Typical Transfer Characteristics TOP BOTTOM 2. 0 0.1 V Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 0.0 A -60 -40 - unc tion T em perature (° Fig 4. Normalized On-Resistance IRL530NS/L VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2 0µ ° rain-to-S ource V oltage ( Vs. Temperature A A ...
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... IRL530NS iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° 5° 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage ing lse 1.2 1.4 Fig 8. Maximum Safe Operating Area = 9 FIG otal G ate C harge ( Fig 6 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRL530NS D.U. 5.0V µ d(off ...
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... IRL530NS D.U. 5 0.01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform (BR)DSS tarting unc tion T em perature (° Fig 12c. Maximum Avalanche Energy Same Type as D.U.T. 12V V GS Fig 13b. Gate Charge Test Circuit ...
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... Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRL530NS/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V ...
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TO-262 Package Outline TO-262 Part Marking Information IGBT 1- GATE 2- COLLEC- TOR ...
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Dimensions are shown in millimeters (inches) FEED DIRECTION FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 Kansas St., El ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...