IDT71V124SA10 Integrated Device Technology, IDT71V124SA10 Datasheet

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IDT71V124SA10

Manufacturer Part Number
IDT71V124SA10
Description
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Manufacturer
Integrated Device Technology
Datasheet

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©2003- Integrated Device Technology, Inc.
128K x 8 advanced high-speed CMOS static RAM
JEDEC revolutionary pinout (center power/GND) for
reduced noise
Equal access and cycle times
– Commercial: 10/12/15/20ns
– Industrial: 10/12/15/20ns
One Chip Select plus one Output Enable pin
Inputs and outputs are LVTTL-compatible
Single 3.3V supply
Low power consumption via chip deselect
Available in a 32-pin 300- and 400-mil Plastic SOJ, and
32-pin Type II TSOP packages.
I/O
0
- I/O
A
A
16
7
0
WE
OE
CS
8
ADDRESS
DECODER
8
3.3V CMOS Static RAM
1 Meg (128K x 8-Bit)
Center Power &
Ground Pinout
CONTROL
LOGIC
1
as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs. The JEDEC center power/GND pinout reduces
noise generation and improves system performance.
5ns, with address access times as fast as 9ns available. All bidirec-
tional inputs and outputs of the IDT71V124 are LVTTL-compatible and
operation is from a single 3.3V supply. Fully static asynchronous
circuitry is used; no clocks or refreshes are required for operation.
The IDT71V124 is a 1,048,576-bit high-speed static RAM organized
The IDT71V124 has an output enable pin which operates as fast as
MEMORY ARRAY
I/O CONTROL
1,048,576-BIT
3873 drw 01
IDT71V124SA
8
.
DSC-3873/07

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IDT71V124SA10 Summary of contents

Page 1

... I ©2003- Integrated Device Technology, Inc. 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with inno- vative circuit design techniques, provides a cost-effective solution for high- speed memory needs ...

Page 2

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout I SO32-2 7 I/O 1 SO32 ...

Page 3

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Symbol Parameter I Dynamic Operating Current CC CS < Outputs Open Dynamic Standby Power Supply Current SB CS > ...

Page 4

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (1) t Chip Select to ...

Page 5

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout ADDRESS OE CS HIGH IMPEDANCE DATA OUT ADDRESS PREVIOUS DATA DATA OUT OUT NOTES HIGH for Read Cycle. 2. Device is continuously ...

Page 6

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout ADDRESS (3) DATA OUT DATA IN ADDRESS DATA IN NOTES write occurs during the overlap ...

Page 7

IDT71V124SA, 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout IDT 71V124 SA XX Device Power Speed Package Type X X Process/ Temperature Range Blank I TY 300-mil SOJ (SO32-2) Y 400-mil SOJ (SO32-3) PH ...

Page 8

... Removed footnote "400-mil SOJ package only offered in 10ns and 12ns speed grade" 11/30/03 Pg. 1,3,7 Added Industrial temperature offering 10ns speed grade CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 The IDT logo is a registered trademark of Integrated Device Technology, Inc. and and t OHZ ...

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