PS12013-A Powerex Inc, PS12013-A Datasheet

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PS12013-A

Manufacturer Part Number
PS12013-A
Description
IC CONV AC-DC 3-PHASE 1200V 5A
Manufacturer
Powerex Inc
Datasheet

Specifications of PS12013-A

Voltage - Output
1200V
Number Of Outputs
1
Power (watts)
6000W
Applications
Commercial
Power Supply Type
Switching (Closed Frame)
Voltage - Input
900VAC
Mounting Type
Through Hole
1st Output
1200 VDC @ 5A
Size / Dimension
3.64" L x 3.17" W x 0.8" H (92.5mm x 80.5mm x 20.4mm)
Power (watts) - Rated
6000W
Operating Temperature
-20°C ~ 100°C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PS12013-A
Manufacturer:
MITSUBISHI
Quantity:
45
Part Number:
PS12013-A
Manufacturer:
FAIRCHILD
Quantity:
726
Part Number:
PS12013-A
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
PS12013-A
Quantity:
60
APPLICATION
Acoustic noise-less 0.4kW/AC400V Class 3 Phase inverter and other motor control applica-
tions.
(Fig. 1)
PS12013-A
PACKAGE OUTLINES
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For P-Side IGBTs : Drive circuit, High-speed photo-couplers, Short circuit protection (SC),
• For N-Side IGBTs : Drive circuit, Short-circuit protection (SC), Control supply Under voltage and Over voltage protection (OV/UV),
• For Brake circuit IGBT : Drive circuit.
• Warning and Fault signaling :
• For system feedback control : Analogue signal feedback reproducing actual inverter output phase current (3 ).
• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
F
F
F
CL : Warning for inverter current overload condition
O1
O2
O3
(10.35)
: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
: N-side control supply abnormality locking (OV/UV)
: System over-temperature protection (OT).
Bootstrap circuit supply scheme (Single drive power supply ) and Under-voltage protection (UV).
System Over temperature protection (OT), Fault output signaling circuit (Fo), and Current-Limit warning signal out-
put (CL).
1
2
31
(7.75)
0.5
1.2
0.3
32
10.16
71.5
50.8
80.5
LABEL
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
33
56
76.5
6
0.3
0.5
34
0.8
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
1
0.3
0.8
1
35
23
36
2.5
4-R4
4- 4
27
20.4
1
13
INTEGRATED FUNCTIONS AND FEATURES
• 3-Phase IGBT inverter bridge configured by the latest 3rd.
• Circuit for dynamic braking of motor regenerative energy.
• Inverter output current capability Io (Note 1) :
8.5
1
generation IGBT and diode technologies.
(Note 1) : The inverter output current is assumed to be sinu-
Type Name
PS12013-A
soidal and the peak current value of each of the
above loading cases is defined as : Iop = Io
100% load
1.8A (rms)
PS12013-A
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN
21 VN
22 WN
23 Br
Terminals Assignment:
1 CBU+
2 CBU–
3 CBV+
4 CBV–
5 CBW+
6 CBW–
7 GND
8 VDL
9 VDH
INSULATED TYPE
FLAT-BASE TYPE
2.7A (rms), 1min
150% over load
INSULATED TYPE
PS12013-A
FLAT-BASE TYPE
31 P
32 B
33 N
34 U
35 V
36 W
Jan. 2000
2

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PS12013-A Summary of contents

Page 1

... The inverter output current is assumed to be sinu- soidal and the peak current value of each of the above loading cases is defined as : Iop = 20 2.5 36 4-R4 8 PS12013-A PS12013-A FLAT-BASE TYPE FLAT-BASE TYPE INSULATED TYPE INSULATED TYPE 150% over load 2.7A (rms), 1min 2 Terminals Assignment: 1 CBU CBU– CBV CBV– ...

Page 2

... N r Applied between F · Sink current of F · F · Applied between CL-GND Sink current of CL Sink current of CU · CV · CW PS12013-A FLAT-BASE TYPE INSULATED TYPE Input Circuit 400V class line output T S Control supply circuit fault sense GND VDL VDH ...

Page 3

... OL 13. 16. 5V 15V CIN 15V CIN Integrated between input terminal-V DH PS12013-A FLAT-BASE TYPE INSULATED TYPE Ratings (Note 2) –20 ~ +125 –40 ~ +125 (Fig. 3) –20 ~ +100 2500 Vrms 0.78 ~ 1.27 Ratings Min. Typ. Max. — — 3.0 — — 7.3 — — ...

Page 4

... Open collector output Condition Applied between P-N Applied between V -GND BU+ BU– BW+ BW– Applied between V -GND DL Using application circuit Using application circuit PS12013-A FLAT-BASE TYPE INSULATED TYPE Ratings Min. Typ. Max. — 2 — Note 3) 2 500 — 4.0 — 65 100 1 ...

Page 5

... Therefore, the rate of change is measured delayed point. 200 300 400 = ” is reset by the high-to-low going edge of either an upper-leg lower-leg input ” flag and reset on a pulse-by-pulse scheme. The protection by O PS12013-A FLAT-BASE TYPE INSULATED TYPE C 500 (505 (505 s)- ” signal is outputted. After an “input O ...

Page 6

... Apply a train of short ON pulses at all N-IGBT input pins for adequate charging (pulse width = approx number of pulses =10 ~ 500 de- pending on the boot-strap capacitor size resetting sequence: O1 Apply ON signals to the following input pins : Br Fig. 10 RECOMMENDED I/O INTERFACE CIRCUIT output may fall to O1 PWM starts a) b) Un/Vn/Wn Up/Vp/Wp in that order. PS12013-A FLAT-BASE TYPE INSULATED TYPE N-side FWDi Current – (5V ...

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