SI1869DH-T1-E3 Vishay, SI1869DH-T1-E3 Datasheet
SI1869DH-T1-E3
Specifications of SI1869DH-T1-E3
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SI1869DH-T1-E3 Summary of contents
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... The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1869DH operates on supply lines from 1 and can drive loads up to 1.2 A. APPLICATION CIRCUITS ...
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... Top View R2 R1 ON/OFF Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free) Si1869DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (D2-S2) Input Voltage ON/OFF Voltage Load Current a Continuous Intrinsic Diode Conduction a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω) ...
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... V Variance vs. Junction Temperature DROP Document Number: 73449 S10-0792-Rev. C, 05-Apr- °C J 2.0 2.5 3 °C J 1.0 1.2 1.4 1 100 125 150 Si1869DH Vishay Siliconix 0 1 ON/OFF 0.5 0 125 °C J 0.3 0 °C J 0.1 0.0 0.0 0.5 1.0 1 2.5 V DROP ...
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... Si1869DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ON/OFF 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J Normalized On-Resistance vs. Junction Temperature ON/OFF µ µ d(off (kΩ) Switching Variation 2 kΩ IN 250 200 150 ON/OFF µ µF o 100 (kΩ) Switching Variation 4 300 kΩ ...
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... R2 (kΩ) Switching Variation 1 300 kΩ Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1869DH Vishay Siliconix 80 100 Notes Duty Cycle Per Unit Base = R = 100 °C/W thJA ( thJA 4. Surface Mounted ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...